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Memory Circuit Design EngineerRole Overview:
We are seeking aMemory Circuit Design Engineerto lead the development of memory IC projects from concept to tape-out. This role involves defining memory architectures, optimizing key performance metrics, and collaborating with cross-functional teams to ensure smooth integration into broader system designs.
Key Responsibilities:- Overseeend-to-end memory IC design, fromconcept developmentthroughtape-out.
- Define and implementmemory architecturesto maximizespeed, power efficiency, and area utilization.
- Develop and executetest plans, using simulation tools to validate performance and functionality.
- Troubleshoot and resolve design challenges throughsimulation and analysis.
- Work alongsideanalog, digital, and system engineersto ensure seamless integration of memory circuits.
- Contribute tosilicon bring-upand validation efforts, addressing any post-silicon issues.
- Stay updated onindustry trendsand emerging technologies inmemory design.
- Implement rigoroustesting and validation methodologiesto ensure design reliability.
- Maintain clear and comprehensivetechnical documentationto support project continuity.
Qualifications & Skills:- MS or PhD in Electrical Engineering, specializing inCMOS memory, digital, or mixed-signal design.
- 5+ yearsof experience incircuit designwithin advanced CMOS processes (PhD research may count as experience).
- Expertise in memory circuit design forSRAM, DRAM, Flash, or emerging non-volatile memory (NVM) technologies.
- Strong knowledge oflayout design, including layout-dependent effects,pitch matching, anddesign for manufacturability (DFM).
- Familiarity withEDA toolsand memory design workflows, includingdesign, simulation, layout, and verification(e.g.,Synopsys, Cadence, Mentor Graphics).
- Ability todevelop innovative circuit architecturesto meet customer requirements.
- Comfortable working in astartup environment, both independently and as part of a team.
Preferred Experience (a Strong Plus):- Hands-on experience withkey memory blocks(e.g.,sense amplifiers, charge pumps, read/write assist circuits, PVT trackers, power gating).
- Familiarity withmemory controllersormemory interfaces.
- Experience inemerging non-volatile memory (NVM)technologies.
Employment Type:Full-time
Pay Range:$150,000 - $250,000/year (DOE)
Location:Fremont, CA (On-site)
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