Lead SiC Power Device Research Scientist

Wolfspeed; Durham (NC); On-site; USD 130,000 - 210,000; Full time

Job summary

Wolfspeed in Durham, NC, seeks a Ph.D.-level device development leader for next-generation silicon carbide power devices (MOSFETs, JFETs, diodes, IGBTs). You will lead design efforts for high-voltage SiC devices and drive DoE activities to optimize performance and reliability.

Collaborating with Process Development, Test & Validation, Reliability, and NPI teams, you will guide the full product life cycle from concept to qualification, prepare technical presentations, and contribute to internal

Qualifications

• Ph.D. in Electrical Engineering, Solid State Physics, or closely related area.
• 5–10 years of industrial experience in high voltage silicon bipolar power device development.
• Strong understanding in semiconductor device physics.
• Hands-on characterization of power semiconductor devices.
• Working knowledge of CAD tools and TCAD.
• Understanding of fabrication processes and device characterization methods.
• Experience with DoE and data interpretation.
• Ability to work in a team and communicate effectively.
• US Citizenship required.

Responsibilities

• Lead device development efforts in high performance SiC power switching devices.
• Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors.
• Explore new device concepts for future High Voltage / Medium Voltage SiC power devices.
• Perform Design of Experiment (DoE) activities for performance optimization of High Voltage SiC power devices.
• Provide optimum device designs with considerations to manufacturability and reliability.
• Hands on characterization experimental devices.
• Data analysis of experimental data.
• Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications.
• Prepare technical presentations and papers for internal meetings, as well as conferences and journals

Skills

Device design

High voltage

Semiconductor device physics

DoE

Data analysis

Communication skills

Teamwork

Analytical

Power electronics

Problem solving

Education

Ph.D. in Electrical Engineering

Tools

TCAD tools

CAD layout tools

Job description

Wolfspeed in Durham, NC, seeks a Ph.D.-level device development leader for next-generation silicon carbide power devices (MOSFETs, JFETs, diodes, IGBTs). You will lead design efforts for high-voltage SiC devices and drive DoE activities to optimize performance and reliability.

Collaborating with Process Development, Test & Validation, Reliability, and NPI teams, you will guide the full product life cycle from concept to qualification, prepare technical presentations, and contribute to internal