Lead High-Power InP DFB Laser Architect

SemiNex Corporation; Danvers (MA); On-site; USD 140,000 - 210,000; Full time

Benefits offered by this job

Competitive base salary

Performance-based bonus

Equity participation (pre-IPO upside)

Job summary

SemiNex Corporation seeks a PhD-level engineer to lead the design of high-power InP-based DFB laser diodes for next‑generation optical interconnects. You will own device innovations from concept to volume production and collaborate across epitaxy, fabrication, and systems teams to push performance to new levels.

The role emphasizes hands-on device development, detailed electro-optical characterization, and translating physics insights into scalable manufacturing processes with strong IP

Qualifications

• PhD in Electrical Engineering, Physics, Materials Science, or related field.
• 5+ years of hands-on experience in optoelectronic device development.
• Strong expertise in semiconductor laser physics and modeling.
• Experience with epitaxial growth (MOCVD/MBE) and III-V processing.
• Proven track record delivering high-performance laser devices from concept to production.
• Ability to translate complex physics into manufacturable solutions.

Responsibilities

• Lead design and development of high-power InP-based DFB laser diodes for optical interconnects.
• Own device innovation from concept through qualification to volume manufacture.
• Design epitaxial structures, waveguides, gratings, and device geometries.
• Develop and refine III-V fabrication processes for high yield production.
• Drive mask layout and photonic design implementation.
• Perform electro-optical characterization, root-cause analysis, and optimization.
• Establish structure–process–performance correlations using data-driven methods.
• Collaborate across epitaxy, fabrication, packaging, and systems teams.

Skills

Semiconductor laser physics

Device modeling

Electro-optical characterization

Data-driven optimization

Education

PhD in Electrical Engineering, Physics, Materials Science, or related field

Tools

MOCVD

MBE

Job description

SemiNex Corporation seeks a PhD-level engineer to lead the design of high-power InP-based DFB laser diodes for next‑generation optical interconnects. You will own device innovations from concept to volume production and collaborate across epitaxy, fabrication, and systems teams to push performance to new levels.

The role emphasizes hands-on device development, detailed electro-optical characterization, and translating physics insights into scalable manufacturing processes with strong IP