Principal InP Laser Development Engineer

Nokia Group

Sunnyvale (CA)

Hybrid

USD 159,782 - 296,739

Full time

14 days+

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Job summary

A global telecommunications and technology company is seeking a Principal InP Laser Development Engineer for a hybrid position in Sunnyvale, California. The candidate should possess a Ph.D. in Electrical Engineering or Physics and have 8 to 15 years of industry experience in designing InP lasers for high volume applications. Responsibilities include laser design and simulation, working with optical waveguides, and guiding development teams. A competitive salary range of $159,782.61 - $296,739.13 is offered.

Qualifications

  • 8 to 15 years of industry experience designing and developing InP lasers for high volume applications.

Responsibilities

  • Design and simulation of optical waveguides and coupling lasers to fibers.
  • Simulation of lasers and SOAs with commercial software.
  • Design of epitaxial layers for active devices.
  • Fabrication knowledge of InP devices.
  • Testing characterization of InP lasers and SOAs.
  • Guiding a team in developing InP lasers.

Skills

Design of InP lasers for transmitter PICs
Design of InP lasers for high-power applications
Design and simulation of optical waveguides
Simulation of lasers with software
Design of epitaxial layers for active devices
Testing characterization of InP lasers
Data query and analysis in manufacturing
Guiding teams in laser development

Education

Ph.D. in Electrical Engineering or Physics

Job description

Principal InP Laser Development Engineer

United States (Hybrid)

Prerequisite experience should include 1 or more areas

  • Design of InP lasers for transmitter PICs
  • Design of InP lasers for high-power applications
Your responsibilities

Key engineering expertise in all of the following areas is required

  • Design and simulation of optical waveguides, coupling lasers to fibers
  • Simulation of lasers and SOAs with commercial or personally developed software, including carriers and optical fields
  • Design of epitaxial layers required for active devices
  • Process design/fabrication knowledge or process development experience of InP devices or PICs
  • Expertise in testing characterization of InP lasers and SOAs
  • Extensive photonic device data query and analysis in manufacturing environment
  • Experience guiding a team to develop InP lasers for commercial products

Location:willing to relocate to Sunnyvale/San Jose, CA

Your skills and experience

Ph.D. in EE or Physics, 8 to 15yrs industry experience designing and developing InP lasers for high volume applications.

NION2026

Job Info
  • Job Category Applied R&D
  • Posting Date 03/12/2026
  • Degree Level Doctor’s degree (e.g PhD)
  • Job Schedule Full time
  • Job Type Experienced
  • Job Identification 32267
  • US/Canada Salary Range US Salary range: $159,782.61 -$ 296,739.13
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