Lead Device Engineer - 3D NAND & Memory

SanDisk; Milpitas (CA); In loco; USD 137.000 - 232.000; Tempo pieno

Vantaggi offerti da questo lavoro

Short-Term Incentive (STI)

Long-Term Incentive (LTI)

401(k) Plan

Medical/Dental/Vision Insurance

Descrizione del lavoro

Sandisk in Milpitas, CA is seeking a Staff Device Engineer in Technology Development to lead the development of the next generation of 3D NAND flash. The role focuses on electrical characterizations of memory chips to improve reliability and performance, with emphasis on robust experimental methods and cross-functional collaboration.

Candidates should hold a PhD in Electrical Engineering, Applied Physics, Materials Science or a related field and have 3+ years of industry experience, deep

Competenze

• Ph.D. in Electrical Engineering, Applied Physics, Materials Science or related field with 3+ years of industry experience.
• In-depth knowledge of semiconductor device physics and/or nano-electronics; familiarity with advanced semiconductor processing tech.
• Strong ability to achieve results in a fast-moving, dynamic environment.
• Self-motivated, self-directed and effective team player.

Mansioni

• Develop the future generation of 3D NAND flash.
• Electrical characterization of flash memory chips to improve reliability and performance.
• Characterize memory cells and arrays, evaluate reliability, optimize operating methods and parameters; invent solutions.
• Root-cause analysis of cell reliability issues and identifying solutions.

Conoscenze

Device physics

Semiconductor processing

Statistics

Teamwork

Formazione

Ph.D. in Electrical Engineering, Applied Physics, Materials Science or related field

Descrizione del lavoro

Sandisk in Milpitas, CA is seeking a Staff Device Engineer in Technology Development to lead the development of the next generation of 3D NAND flash. The role focuses on electrical characterizations of memory chips to improve reliability and performance, with emphasis on robust experimental methods and cross-functional collaboration.

Candidates should hold a PhD in Electrical Engineering, Applied Physics, Materials Science or a related field and have 3+ years of industry experience, deep