GaN Power Device Engineer — Shape Next‑Gen AI Power

Vertical Semiconductor; Somerville (MA); On-site; USD 120,000 - 160,000; Full time

Job summary

Vertical Semiconductor, a venture-backed MIT spin‑out, is leading the development of vertical GaN power devices and building the essential power layer for the next generation of compute and AI. The role involves architecture, process integration, modeling, characterization and reliability, with hands‑on work across device modeling, on‑wafer tests, and failure analysis.

Based in Somerville, MA, join a startup that values initiative and strong collaboration.

Qualifications

• B.S., M.S., or Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field.
• Experience with GaN, SiC, or other wide‑bandgap semiconductors for power devices.
• Hands‑on experience in at least one: device characterization, process integration, or device modeling and simulation.
• Comfortable working with data analysis tools such as Python or MATLAB.
• Strong communication skills and the ability to work across disciplines.

Responsibilities

• Support device architecture, process integration, and technology development for our vertical GaN power devices.
• Run device modeling and simulation to inform design and process decisions.
• Perform on‑wafer and discrete device characterization, including DC, CV, and dynamic testing.
• Support failure analysis and reliability investigations for wide‑bandgap power devices.
• Develop and review GDS layouts and test structures to support device learning and validation.
• Collaborate with epitaxy, process, packaging, and reliability teams on cross‑functional device work.
• Build and run application evaluation boards to connect device behavior to system‑level performance.
• Keep clear records of experiments, test data, and process learnings.

Skills

Python

MATLAB

Data analysis

Communication

Education

B.S. in Electrical Engineering

M.S. in Electrical Engineering

Ph.D. in a related field

Tools

GaN

SiC

Job description

Vertical Semiconductor, a venture-backed MIT spin‑out, is leading the development of vertical GaN power devices and building the essential power layer for the next generation of compute and AI. The role involves architecture, process integration, modeling, characterization and reliability, with hands‑on work across device modeling, on‑wafer tests, and failure analysis.

Based in Somerville, MA, join a startup that values initiative and strong collaboration.