GaN Epitaxy Research Scientist - Growth & Analysis

US01 Wolfspeed, Inc.

Durham (NC)

On-site

USD 90,000 - 130,000

Full time

14 days+

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Benefits offered by this job

Childcare assistance
Paid parental leave
Continuing education assistance
Employee Resource Groups and community

Job summary

Wolfspeed, Inc. in Durham, NC is seeking a scientist for GaN epitaxy R&D to advance crystal growth processes and characterization.

You will interpret results, drive improvements, and define projects with cross-functional teams to deliver high-quality thin films for next-generation power and RF devices. The role requires a PhD (or MS with extensive industry experience) in materials science, physics, or related fields, plus strong data analytics and hands-on experimental skills.

Qualifications

  • PhD or MS with substantial industrial R&D experience in materials science, electrical engineering, or related field.
  • Strong understanding of wide band gap materials, vacuum tech and basic device physics required.
  • Experience with statistical analysis of large data sets and data-driven process improvement.
  • Attention to detail and excellent communication and problem-solving abilities.

Responsibilities

  • Develop new and improved GaN epitaxial crystal growth processes.
  • Interpret characterization observations into actionable plans.
  • Review parametric data to drive process improvements and troubleshooting.
  • Define and own projects, plans, timelines, and deliverables through to completion.
  • Present results to R&D and Production teams with clear written and verbal communication.
  • Interface with technicians, engineers, and other staff in a shared resources environment.

Skills

Wide band gap materials
Vacuum technology
Device physics basics
Statistical data analysis
Data interpretation
Attention to detail
Analytical problem solving
Hands-on attitude

Education

PhD in Materials/ Chemical/ Ceramics/ EE/ Physical Science
MS with 5+ years industrial R&D

Job description

Wolfspeed, Inc. in Durham, NC is seeking a scientist for GaN epitaxy R&D to advance crystal growth processes and characterization.

You will interpret results, drive improvements, and define projects with cross-functional teams to deliver high-quality thin films for next-generation power and RF devices. The role requires a PhD (or MS with extensive industry experience) in materials science, physics, or related fields, plus strong data analytics and hands-on experimental skills.

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