DRAM Device Engineer Intern — Data-Driven Problem Solver

Micron Technology; Boise (ID); On-site; USD 30,000 - 39,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology's DRAM Device Engineering Internship offers hands-on experience in a manufacturing fab, supporting device performance, reliability, and yield improvement.

You will analyze electrical test results, develop data automation methods, and collaborate across data engineering, process integration, product engineering, and failure analysis teams to solve real-world semiconductor challenges.

Qualifications

• Currently pursuing an MS or PhD in Electrical, Materials Engineering or related field.
• Strong knowledge of semiconductor device physics.
• Understanding of device characterization and electrical test data analysis.
• Experience with statistical data analysis tools (JMP, Python, MATLAB, R).
• Strong communication skills for presenting results to engineering teams.

Responsibilities

• Analyze device performance, yield, and reliability data in manufacturing fab.
• Analyze electrical test results and provide feedback to process teams.
• Drive device performance improvements via DOE on silicon.
• Perform device characterization and deep-dive analyses.
• Leverage AI/data automation to improve problem solving.

Skills

Semiconductor device physics

Device characterization

Statistical data analysis

Data analysis tools (Python/MATLAB/R/J

Communication skills

Education

MS or PhD in Electrical/Materials Engineering

Tools

JMP

Python

MATLAB

R

Job description

Micron Technology's DRAM Device Engineering Internship offers hands-on experience in a manufacturing fab, supporting device performance, reliability, and yield improvement.

You will analyze electrical test results, develop data automation methods, and collaborate across data engineering, process integration, product engineering, and failure analysis teams to solve real-world semiconductor challenges.