DRAM Design Intern: Shape Next-Gen Memory & AI-Driven Tools

Micron Technology, Inc.

Boise (ID)

On-site

USD 34,000 - 48,000

Full time

7 days ago

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Benefits offered by this job

Medical, dental, vision plans

Paid time off & holidays

Job summary

Micron Technology, Inc. in Boise, Idaho, is seeking an Intern DRAM Design Engineer to contribute to the design, analysis, verification, and optimization of digital, analog, and mixed-signal circuits for next-generation memory products.

You will collaborate with global teams to support new product development and manufacturability initiatives. The role offers exposure to AI-assisted design workflows, opportunities to apply AI tools, and a path toward building practical experience in memory

Qualifications

Pursuing a Bachelor's or Master's in Electrical or Computer Engineering.
Demonstrated ability to analyze, troubleshoot, and present technical results.
Familiarity with digital/analog/mixed-signal circuit concepts preferred.

Responsibilities

Play a key role in development of memory products through circuit build, layout, and validation.
Support physical design activities including floor-planning, placement, routing, and verification.
Collaborate with global teams to improve manufacturability, quality, and performance.
Develop AI-assisted software tools to enhance design workflows and productivity.