DRAM Design Intern — AI-Enhanced Memory Innovation

Micron; Boise (ID); On-site; USD 28,000 - 41,000; Full time

Job summary

Micron Technology is seeking an Intern DRAM Design Engineer to contribute to design, analysis, verification, and optimization of digital, analog, and mixed-signal circuits for next-generation memory products. You will work with design, verification, product engineering, test, process integration, and marketing teams to support new product development and manufacturability initiatives.

As part of the role, you will explore AI-assisted methodologies to improve design workflows, automation, and

Qualifications

• Currently pursuing a Bachelor's or Master's degree in Electrical Engineering or Computer Engineering.
• Must be continuing academic studies through Fall 2027 and not graduate before Fall 2027.
• Coursework or research in digital/ analog design, VLSI, or computer architecture.

Responsibilities

• Contribute to design, analysis, verification, and optimization of digital, analog, and mixed-signal circuits for memory products.
• Assist with CAD, modeling, and verification to improve design methodologies and quality.
• Collaborate with global teams to enhance manufacturability, reliability, and performance.

Skills

Problem-solving

Analytical thinking

Communication

Education

Bachelor's or Master's in EE/CE

Tools

EDA tools

Job description

Micron Technology is seeking an Intern DRAM Design Engineer to contribute to design, analysis, verification, and optimization of digital, analog, and mixed-signal circuits for next-generation memory products. You will work with design, verification, product engineering, test, process integration, and marketing teams to support new product development and manufacturability initiatives.

As part of the role, you will explore AI-assisted methodologies to improve design workflows, automation, and