Director, Ultra-High-Voltage SiC Device Technology

NAVITAS SEMICONDUCTOR USA, INC.; Torrance (CA); In loco; USD 200.000 - 250.000; Tempo pieno

Descrizione del lavoro

Navitas Semiconductor Usa, Inc. is seeking a Director of Ultra-High-Voltage SiC Device Technology to lead device architecture and process technology for 3.3 kV to 10 kV+ SiC devices, coordinating with foundries and research partners to translate concepts into silicon.

You will head government-funded programs, drive TCAD-driven design, reliability methods, and collaboration across teams in the US and India, while building IP and guiding publications in the field.

Competenze

• Ph.D. in Electrical Engineering, Physics, or Materials Science.
• 12+ years of industrial or national-lab R&D in SiC power devices.
• Experience as technical lead or principal investigator on externally funded programs.
• Proven record of publications and/or patents in SiC power devices.

Mansioni

• Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV–10 kV+).
• Serve as technical lead and PI on US government-funded development programs.
• Define process flows with foundries and research partners; drive split-lot experiments.
• Direct TCAD-driven design, mask reviews, and characterization planning.
• Establish ultra-high-voltage reliability methods (HTRB, HTGB, avalanche).
• Mentor device engineers across US and India, grow the team.
• Build Navitas IP and support customers and business units.

Conoscenze

Leadership

Program management

Device physics

Analytical skills

Formazione

Ph.D. in Electrical Engineering, Physics, or Materials Science

Strumenti

TCAD

Descrizione del lavoro

Job Purpose:Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.With more than 30 years of combined expertise in wide bandgap technologies, GaNFast power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.We are seeking a Director of Ultra-High-Voltage SiC Device Technology to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.The Director of Ultra-High-Voltage SiC Device Technology reports to the SVP & Chief Technology Officer and owns device and process technology for our ultra-high-voltage SiC roadmap, from 3.3 kV to 10 kV and beyond: MOSFETs, PiN diodes, JFETs and bipolar devices. The director leads U.S. government-funded technology programs as technical lead and principal investigator, and works hands-on with foundry and research partners to take new device concepts from simulation to qualified silicon.Key Responsibilities and Duties:Ultra-High-Voltage Device Technology: Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.Government Program Leadership: Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.Process Integration with Partners: Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.Design, Simulation and Characterization: Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.Reliability and Test Methods: Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.Team Development: Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.IP and Customer Engagement: Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradationStrong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivationTCAD-driven device design and disciplined, data-driven experiment planningFamiliarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)Strong analytical and problem-solving skillsExcellent technical writing and communication, including proposals and government program reportingComfortable working with foundries, research institutes and teams across global time zonesLeading by exampleRequired QualificationsPh.D. in Electrical Engineering, Physics, Materials Science or a related field.12+ years of industrial or national-lab research and development in SiC power devices, with a focus on ultra-high-voltage switches.Demonstrated design, fabrication and characterization of SiC devices rated 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors or PiN diodes.Hands-on depth in SiC process technology: implantation, oxidation, ohmic contacts, etching and edge termination.Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting and milestone delivery.A strong record of publications and/or patents in SiC power devices.Must be a U.S. person (see Export Control below).Preferred QualificationsExperience with SiC integrated circuits or high-temperature SiC electronics.Experience with bipolar SiC devices and their reliability, such as bipolar degradation and basal plane dislocation control.Experience with U.S. Department of Defense or Department of Energy programs.Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.Experience leading engineers across multiple sites and time zones.What We OfferA front-row seat to the future of power electronics. Work on cutting-edge GaN and SiC technologies that are transforming AI data centers, electrification, and global energy infrastructure.A fast-paced, high-energy environment. We move quickly, make decisions with purpose, and empower employees to take ownership and drive real impact from day one.A team that shows up and delivers. We care deeply about our mission, our customers, and each other. We collaborate, support one another, and bring intensity and accountability to everything we do.Full support to succeed. You’ll have access to leadership, cross-functional collaboration, and the resources needed to innovate and execute at a high level.Competitive total rewards. Comprehensive health, dental, and vision coverage, unlimited PTO, and a competitive compensation package including base salary, performance bonus, and equity awards.Base Salary Range:$200,000 - $250,000 depending on experienceExport Control:This position requires access to technology and technical data controlled under the International Traffic in Arms Regulations (ITAR) and the Export Administration Regulations (EAR). Applicants must be U.S. persons: U.S. citizens, U.S. lawful permanent residents, or protected individuals under 8 U.S.C. 1324b(a)(3).Equal Opportunity:Navitas is an equal opportunity employer. We consider all qualified applicants without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, veteran status, or any other characteristic protected by law.