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MICRON SEMICONDUCTOR ASIA OPERATIONS PTE. LTD. is seeking a Process Development professional to advance thin film technologies. You will develop, optimize, and characterize ALD/CVD processes, drive data-driven improvements, and scale cell film processes across nodes in a collaborative, cross-functional environment.
The role emphasizes mentorship, problem-solving, and close collaboration with device teams to ensure electrical performance and manufacturability of advanced memory technologies.
Develop, optimize, and characterize thin film processes (ALD/CVD) to meet performance, reliability, and manufacturability targets.
Execute well‑designed experiments, analyze data, and translate results into process improvements.
Support scaling of cell film processes across nodes and platforms.
Own defined portions of a process module or sub‑module under guidance from senior engineers.
Track process margins, key sensitivities, and integration risks.
Drive issue resolution for process and tool‑related problems within assigned scope.
Work closely with integration and device teams to ensure process compatibility and electrical performance.
Correlate material, structural, and electrical data to guide process optimization.
Support failure analysis and root‑cause investigations for yield and reliability issues.
Develop strong hands‑on knowledge of cell film equipment and hardware behavior.
Partner with equipment engineers and suppliers to improve process stability and capability.
Support tool qualifications, upgrades, and platform transfers.
Communicate results clearly through technical reports, reviews, and data summaries.
Participate actively in cross‑functional forums and project teams.
Escalate risks and gaps with clear data‑driven recommendations.
Continuously build depth in thin film materials, chemistry, and process physics.
Learn to independently frame problems and propose technically sound solutions.
Mentor junior engineers and contribute to team knowledge sharing.
PhD or equivalent experience in Materials Science, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or related field.
3+ years of experience in thin film R&D for microelectronic devices, with a proven track record of leading complex technology development.
Demonstrated ability to influence technology direction, mentor teams, and deliver innovative solutions for advanced memory nodes.
Strong fundamentals in thin film deposition (ALD/CVD) and materials characterization.
Working knowledge of plasma processes, vacuum systems, and chemical reactions.
Ability to link process conditions to material properties and device behavior.
Familiarity with electrical test methods and fab metrology tools.
Understanding of NAND cell structures and basic device physics.