NAND Cell Device Engineer - AI-Driven Memory Innovation

MICRON SEMICONDUCTOR ASIA OPERATIONS PTE LTD; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

Micron Technology, Inc. in Singapore seeks a NAND Cell Device Engineer to drive characterization, understanding, and optimization of next‑generation memory cells.

You will collaborate across device, process integration, design, product and reliability teams to tackle complex technical challenges and enable future technology nodes.

Join an inclusive team focused on integrity, sustainability and innovation, using deep device physics and data‑driven insights to influence NAND technology directions.

Qualifications

• MS/PhD in Electrical Engineering, Physics, Materials Science, or a related field.
• Strong foundation in semiconductor device physics and fabrication processes.
• Knowledge of statistical analysis and numerical computing software (MATLAB, Octave, JMP).
• Hands-on experience with AI-powered tools to boost productivity and data-driven decisions.
• NAND Flash or non-volatile memory experience a plus.
• Excellent communication and collaboration across diverse technical teams.

Responsibilities

• Characterize advanced NAND memory cells and arrays to improve performance, reliability, and scaling.
• Develop deep expertise in NAND device physics, array operation, and failure mechanisms.
• Analyze large-scale electrical test data to uncover device behaviors and screening opportunities.
• Apply AI-assisted workflows to accelerate data analysis and automation.
• Contribute to NAND cell architecture and process development with innovative solutions.
• Collaborate with process integration, design, product engineering, reliability, and manufacturing teams.

Skills

Device physics

Statistical analysis

AI tools experience

NAND Flash knowledge

Communication

Education

MS/PhD in Electrical Engineering or Physics

Tools

MATLAB/Octave/JMP

Job description

Micron Technology, Inc. in Singapore seeks a NAND Cell Device Engineer to drive characterization, understanding, and optimization of next‑generation memory cells.

You will collaborate across device, process integration, design, product and reliability teams to tackle complex technical challenges and enable future technology nodes.

Join an inclusive team focused on integrity, sustainability and innovation, using deep device physics and data‑driven insights to influence NAND technology directions.