Junior Postdoctoral Researcher (JPR) – Quantum Emitters and Rare-Earth Ions in GaN

Institute of High Pressure Physics, Polish Academy of Sciences; Polska; On-site; PLN 167,000 - 223,000; Full time

Job summary

Institute of High Pressure Physics, Polish Academy of Sciences is seeking a Junior Postdoctoral Researcher to study optically active defects and rare-earth ions in GaN for quantum photonic devices. You will perform optical spectroscopy, collaborate with GaN growth and ion-implantation teams, and contribute to the development of cavity-coupled GaN emitters.

The role requires a PhD in Physics or closely related field, hands-on experience with photoluminescence spectroscopy, and strong English

Qualifications

• PhD in Physics, Materials Science, Electrical Engineering or closely related field.
• Research experience in experimental semiconductor physics, quantum optics, photonics or optical spectroscopy.
• Experience with photoluminescence spectroscopy and related optical techniques.

Responsibilities

• Investigate optically active defects and rare-earth ions in GaN for solid-state quantum photonic devices.
• Characterize implanted rare-earth ions and single-photon emitters at low temperatures.
• Collaborate with GaN growth, ion implantation, and annealing teams; perform optical studies in the quantum optics lab.

Skills

Photoluminescence spectroscopy

Single-photon emitters

Optical spectroscopy

English proficiency

Education

PhD in Physics or related field

Tools

Confocal microscopy

Time-resolved spectroscopy

Photon-correlation measurements

Resonant spectroscopy

Job description

Institute of High Pressure Physics, Polish Academy of Sciences

Organisation/Company Institute of High Pressure Physics, Polish Academy of Sciences Research Field Physics » Optics Engineering » Materials engineering Researcher Profile Recognised Researcher (R2) Positions Postdoc Positions Application Deadline 28 Oct 2026 - 23:59 (Europe/Warsaw) Country Poland Type of Contract Temporary Job Status Full-time Hours Per Week 40 Offer Starting Date 1 Nov 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

Position in the project: Junior Postdoctoral Researcher (JPR) – Quantum Emitters and Rare-Earth Ions in GaN

Research Field: Experimental Semiconductor Physics / Quantum Optics / Photonics / Materials Science

Scientific discipline: Physics / Materials Engineering

Job type (employment contract/stipend): Employment contract

Working time (full-time / part-time, hours per week): Full-time position (40 hours per week)

Number of positions available: 1

Monthly remuneration (total employer’s cost): 15000 - 20000 PLN

Expected net salary (approximate): 8 800 - 11600 PLN

Position starts on: November/December 2026

Maximum period of contract/stipend agreement: Contract until 31 December 2029

Institution (full official name): Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences

Project title: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”

Funding programme: Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25

Requirements

Research Field Physics Education Level PhD or equivalent

Research Field Engineering » Materials engineering Education Level PhD or equivalent

Research Field Engineering » Electrical engineering Education Level PhD or equivalent

Skills/Qualifications

Scope of work:

The Junior Postdoctoral Researcher will investigate optically active point defects and rare-earth ions in GaN as building blocks for solid-state quantum photonic devices.

The research will be closely connected to the development of rare-earth-doped and ion-implanted GaN structures within the Center for Nitride Semiconductor Physics and Technology – GaN-Unipress project. Particular emphasis will be placed on the optical characterization of implanted rare-earth ions, including Eu and other technologically relevant dopants, and on understanding the microscopic mechanisms governing the formation, activation, and optical properties of single-photon-emitting centers in GaN.

A major objective of the project will be the integration of GaN quantum emitters with tunable open optical microcavities. The candidate will investigate cavity-enhanced spontaneous emission and Purcell enhancement of rare-earth ions and defect-related single-photon emitters, with the longer-term goal of developing efficient GaN-based quantum light sources.

The work will include optical spectroscopy and quantum-optical characterization of individual emitters, including low-temperature micro-photoluminescence, time-resolved spectroscopy, photon-correlation measurements, excitation spectroscopy, and optical coherence measurements. Depending on the candidate's background, the project may also involve resonant spectroscopy and cavity-QED experiments.

The candidate will work in close collaboration with the GaN growth, ion implantation and ultra-high-pressure annealing teams at the Institute of High Pressure Physics PAS. Experimental optical studies will be carried out primarily in the quantum optics laboratory at the Faculty of Physics, University of Warsaw.

The project will address two closely related scientific questions:

• how implantation and subsequent processing can be used to reproducibly create optically active rare-earth-ion and defect-based quantum emitters in GaN;
• how their emission properties can be controlled and enhanced through coupling to tunable optical microcavities.

The successful candidate will contribute to scientific publications, international conference presentations, and the development of GaN-based quantum photonic devices within the Center for Nitride Semiconductor Physics and Technology – GaN-Unipress project.

Specific Requirements

Profile of candidates/requirements:

• PhD degree in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline (obtained not earlier than 3 years before the application deadline, in line with the JPR profile);
• research experience in experimental semiconductor physics, quantum optics, photonics or optical spectroscopy;
• experience with photoluminescence spectroscopy, confocal microscopy, single-photon emitters, color centers, rare-earth ions or semiconductor nanostructures;
• knowledge of semiconductor defect physics and/or quantum optics;
• willingness to work at the interface between materials development and advanced optical experiments;
• ability to work collaboratively with teams responsible for GaN growth, ion implantation and materials processing;
• good command of written and spoken English.

Preferred Qualifications:

• experience with single-photon emitters and photon-correlation measurements;
• experience with low-temperature optical spectroscopy;
• experience with optical microcavities, cavity QED or Purcell-enhancement experiments;
• experience with rare-earth ions in semiconductors or other solid-state hosts;
• experience with GaN or other wide-bandgap semiconductors;
• experience with resonant spectroscopy and/or measurements of optical coherence.

Languages ENGLISH Level Good

Research Field Physics » Optics Years of Research Experience 1 - 4

Additional Information

Selection process

Required documents:

• Detailed Curriculum Vitae (maximum 3 A4 pages; font size not smaller than 9 pt; single line spacing; margins not smaller than 1.5 cm), including a list of publications and a summary of scientific achievements.
• Cover/motivation letter (maximum 1 A4 page; formatting rules as above), including a concise summary of scientific accomplishments (maximum 3,500 characters, including spaces), a brief description of research interests and motivation for applying, and the earliest possible starting date.
• Copy of the PhD diploma or an official document confirming the award of the doctoral degree.
• Contact details of at least one academic referee (reference letters may be requested at a later stage of the selection process).
• Signed personal data processing statement (GDPR clause).

All documents must be submitted in English in PDF format. Applications that do not comply with the formal requirements may be excluded from further consideration.

Personal data protection clause (GDPR)

Due to the entry into force of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 (General Data Protection Regulation – GDPR), we require that your application includes a statement of consent to the processing of your personal data by the institution conducting the recruitment process.

To allow us to process your data, please include the following statement in your application:

“I hereby consent to the processing of my personal data by the Institute of High Pressure of the Polish Academy of Sciences, with its registered office at Sokolowska 29/37, 01-142 Warsaw, Poland, for the purpose of carrying out the recruitment process, selecting a candidate, and concluding an employment contract at the Institute of High Pressure of the Polish Academy of Sciences. I have been informed of my rights and obligations. I understand that the provision of my personal data is voluntary.”

In accordance with Article 13 of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (Official Journal of the EU L119/1 of 4 May 2016), the Institute of High Pressure of the Polish Academy of Sciences informs that:

• The Controller of your personal data is the Institute of High Pressure of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
• The Controller has appointed a Data Protection Officer who supervises the processing of personal data and can be contacted at: [e-mail] .
• Your personal data will be processed for the purpose of conducting the recruitment process, selecting a candidate, and concluding an employment contract with the Institute of High Pressure of the Polish Academy of Sciences.
• The provided data will be processed pursuant to Article 221 §1 of the Act of 26 June 1974 – Labour Code (uniform text: Journal of Laws of 2018, item 917) and on the basis of your consent.
• Provision of data within the scope required by the Labour Code is mandatory, while the remaining data are processed on the basis of your consent.
• The data will not be shared with external entities.
• The data will be stored until you withdraw your consent to their processing.
• You have the right to access your personal data, to rectify or erase them, to restrict their processing, to object to processing, and to withdraw your consent at any time.
• You have the right to lodge a complaint with the President of the Office for Personal Data Protection.

Additional comments

The project “Center for Nitride Semiconductor Physics and Technology – GaN-Unipress” focuses on advanced research and technology development of gallium nitride (GaN) materials and devices for power electronics and quantum applications. The program integrates bulk GaN crystal growth using the ammonothermal method, advanced epitaxial techniques (MOVPE, HVPE, MBE), ion implantation with ultra-high-pressure annealing, and AI/ML-supported process optimization.

The research activities are organized into four interacting work packages: (WP1) growth and processing of high-quality GaN substrates, (WP2) development of GaN-based power diodes (p–n, p–i–n and Schottky structures), (WP3) rare-earth-doped GaN structures for single-photon sources and quantum sensing, and (WP4) data-driven optimization of materials growth and device fabrication processes.

The project aims not only to advance the scientific understanding of GaN materials, but also to develop mature technological processes and deliver validated device structures and demonstrators ready for further industrial implementation.