Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Unipress; Warszawa; Hybrid; PLN 90,000 - 130,000; Full time

Job summary

Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” poszukuje Junior Postdoctoral Researcher do badań teoretycznych, obliczeniowych i eksperymentalnych nad GaN i materiałami wide-bandgap. Kandydat wniesie doświadczenie w modelowaniu numerycznym, DFT/ab initio i współpracę ze specjalistami ds. eksperymentów.

Wymagane jest doktorat, publikacje i biegła znajomość angielskiego. Praca obejmuje opracowywanie cyfrowych twinów procesu, symulacje wzrostu i analizy danych, w zespole z

Qualifications

• Doktorat z fizyki, nauk o materiałach lub pokrewnych (co najmniej 3 lata do daty zakończenia naboru).
• Publikacje w recenzowanych czasopismach (co najmniej 5).
• Silne podstawy fizyki solid-state, mechaniki kwantowej i nauk o materiałach.

Responsibilities

• Prowadzenie badań teoretycznych, obliczeniowych i eksperymentalnych nad GaN i III-nitrydami.
• Modelowanie pierwszych zasad i atomistyczne symulacje struktur krystalicznych.
• Współpraca z zespołami eksperymentalnymi i rozwijanie cyfrowych twinów procesu wzrostu.
• Publikacje wyników i prezentacje na międzynarodowych konferencjach.

Skills

Solid-state physics

Quantum mechanics

Materials science

Numerical modeling

Python programming

Data analysis

English proficiency

Education

PhD in Physics or Materials Science

Tools

VASP

Quantum ESPRESSO

SIESTA

Job description

Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Nazwa oferty: Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Nazwa stanowiska: Postdoc Position

Organizacja: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences

Tytuł projektu: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”

• PhD degree in Physics, Materials Science, Computational Materials Science, Electrical Engineering, oraclosely related discipline (obtained not earlier than 3 years before the application deadline, in line with the JPR profile);
• Documented publication record in peer-reviewed journals (at least 5 publications), appropriate tothe candidate's career stage.
• Strong background in solid-state physics, quantum mechanics, and materials science.
• Knowledge of materials physics, including crystal structure, electronic structure, defects, phase stability, and the physical properties of crystalline materials and alloys.
• Research experience in theoretical, computational, orexperimental investigations of materials, preferably involving semiconductor materials.
• Experience in theoretical ornumerical modeling, including practical use of atleast one advanced computational package (e.g., VASP, Quantum ESPRESSO, SIESTA, orequivalent).
• Experience working in high-performance computing (HPC) environments.
• Programming skills in Python orother scientific programming languages, with familiarity with numerical computing and data analysis tools (e.g., NumPy, SciPy, pandas, orequivalent).
• Ability torelate theoretical modeling toexperimental observations and willingness tocollaborate closely with experimental teams.
• Good command of written and spoken English.

Preferred Qualifications:

• Research experience with GaN, related III-nitrides, orother wide-bandgap semiconductor materials.
• Experience in first-principles calculations of structural, electronic, mechanical, orthermodynamic properties of materials, including investigations of relationships between atomic structure and macroscopic material properties.
• Hands-on experience in crystal growth ormaterials characterization (e.g., structural, optical, orelectrical characterization).
• Demonstrated ability tocombine theoretical calculations with experimental investigations.
• Familiarity with image analysis tools (e.g., OpenCV, scikit-image) and machine learning libraries (e.g., scikit-learn, PyTorch).
• Knowledge of the Polish language.

The Junior Postdoctoral Researcher will conduct theoretical, computational, and experimental research onGaN and related III-nitride semiconductor materials within WP4 (Materials Informatics). The work will focus onunderstanding their structural, electronic, optical, and thermodynamic properties, crystal defects, doping mechanisms, and growth processes using theoretical approaches, including atomistic simulations and first-principles methods such asdensity functional theory (DFT).

The candidate will contribute tomodeling and optimization of ammonothermal GaN crystal growth in collaboration with WP1. Research activities may include numerical simulations of crystal growth mechanisms, thermodynamics, heat and mass transport, fluid dynamics, and growth kinetics. The candidate will also participate in developing adigital twin of the ammonothermal growth process byintegrating physics-based models, experimental data, and predictive approaches. Using data science, machine learning (ML), and artificial intelligence (AI) methods, the team will investigate relationships between technological process parameters, material properties, defect formation, and crystal quality tosupport process optimization and predictive modeling.

In the area of epitaxial growth and doping technologies, the candidate will closely collaborate with experimental teams working onMOCVD, HVPE, ion implantation, and ultra-high-pressure annealing (UHPA). Asolid understanding of epitaxial processes and defect formation mechanisms will be important for developing reliable simulation strategies and supporting technology optimization. The ability tocombine theoretical modeling with hands-on experimental research will be particularly valued.

The candidate will collaborate with researchers across WP1–WP3, contribute tointerdisciplinary scientific publications, and present research results atinternational conferences.

Required documents:

• Detailed Curriculum Vitae (maximum 3 A4 pages; font size not smaller than 9 pt; single line spacing; margins not smaller than 1.5 cm), including alist of publications and asummary of scientific achievements.
• Cover/motivation letter (maximum 1 A4 page; formatting rules asabove), including aconcise summary of scientific accomplishments (maximum 3,500 characters, including spaces), abrief description of research interests and motivation for applying, and the earliest possible starting date.
• Copy of the PhD diploma oran official document confirming the award of the doctoral degree.
• Contact details of atleast one academic referee (reference letters may be requested atalater stage of the selection process).
• Signed personal data processing statement (GDPR clause).

Personal data protection clause (GDPR)

Due tothe entry into force of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 (General Data Protection Regulation – GDPR), werequire that your application includes astatement of consent tothe processing of your personal data bythe institution conducting the recruitment process.

In accordance with Article 13 of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 onthe protection of natural persons with regard tothe processing of personal data and onthe free movement of such data (Official Journal of the EU L119/1 of 4 May 2016), the Institute of High Pressure of the Polish Academy of Sciences informs that:

• The Controller of your personal data is the Institute of High Pressure of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
• The Controller has appointed aData Protection Officer who supervises the processing of personal data and can be contacted at: [e-mail] .
• Your personal data will be processed for the purpose of conducting the recruitment process, selecting acandidate, and concluding an employment contract with the Institute of High Pressure of the Polish Academy of Sciences.
• The provided data will be processed pursuant toArticle 221 §1 of the Act of 26 June 1974 – Labour Code (uniform text: Journal of Laws of 2018, item 917) and onthe basis of your consent.
• Provision of data within the scope required bythe Labour Code is mandatory, while the remaining data are processed onthe basis of your consent.
• The data will not be shared with external entities.
• The data will be stored until you withdraw your consent totheir processing.
• You have the right toaccess your personal data, torectify orerase them, torestrict their processing, toobject toprocessing, and towithdraw your consent atany time.
• You have the right tolodge acomplaint with the President of the Office for Personal Data Protection.