Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Institute of High Pressure Physics, Polish Academy of Sciences; Polska; On-site; PLN 167,000 - 223,000; Full time

Job summary

Institute of High Pressure Physics, Polish Academy of Sciences in Poland seeks a Junior Postdoctoral Researcher for computational materials science focused on GaN and related III‑nitride systems. The role combines theory, simulations, and experimental collaboration to model growth, defects and properties.

The 40‑hour work week and a contract until end 2029 support advanced research in different WP areas, with ML‑driven process optimization and AI tools to link parameters with material quality.

Qualifications

• PhD in Physics, Materials Science, Computational Materials Science, Electrical Engineering or related field.
• Publications in peer‑reviewed journals, aligned with career stage.
• Strong background in solid state physics, quantum mechanics and materials science.

Responsibilities

• Carry out theoretical, computational and experimental studies on GaN and related III‑nitride materials.
• Model and optimize ammonothermal GaN crystal growth and related processes.
• Develop digital twin concepts by integrating physics models with data and ML.
• Collaborate with experimental teams across WP1–WP3 and publish results.

Skills

Python programming

DFT methods

HPC experience

Machine learning

Data analysis

English proficiency

Education

PhD in Physics

PhD in Materials Science

PhD in Computational Materials Science

PhD in Electrical Engineering

Tools

VASP

Quantum ESPRESSO

SIESTA

Job description

Institute of High Pressure Physics, Polish Academy of Sciences

Organisation/Company Institute of High Pressure Physics, Polish Academy of Sciences Research Field Physics » Computational physics Engineering » Materials engineering Physics » Condensed matter properties Physics » Other Researcher Profile Recognised Researcher (R2) Positions Postdoc Positions Application Deadline 28 Oct 2026 - 23:59 (Europe/Warsaw) Country Poland Type of Contract Temporary Job Status Full-time Hours Per Week 40 Offer Starting Date 1 Nov 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

Position in the project: Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Research Field: Computational Materials Science / Condensed Matter Physics / Semiconductor Physics / Materials Science

Scientific discipline: Physics / Materials Engineering

Job type (employment contract/stipend): Employment contract

Working time (full-time / part-time, hours per week): Full-time position (40 hours per week)

Number of positions available: 1

Monthly remuneration (total employer’s cost): 15000 - 20000 PLN

Expected net salary (approximate): 8 800 - 11600 PLN

Position starts on: November/December 2026

Maximum period of contract/stipend agreement: Contract until 31 December 2029

Institution (full official name): Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences

Project title: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”

Funding programme: Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25

Requirements

Research Field Physics Education Level PhD or equivalent

Research Field Engineering » Materials engineering Education Level PhD or equivalent

Research Field Physics » Computational physics Education Level PhD or equivalent

Research Field Engineering » Electrical engineering Education Level PhD or equivalent

Skills/Qualifications

Scope of work:

The Junior Postdoctoral Researcher will conduct theoretical, computational, and experimental research on GaN and related III-nitride semiconductor materials within WP4 (Materials Informatics). The work will focus on understanding their structural, electronic, optical, and thermodynamic properties, crystal defects, doping mechanisms, and growth processes using theoretical approaches, including atomistic simulations and first-principles methods such as density functional theory (DFT).

The candidate will contribute to modeling and optimization of ammonothermal GaN crystal growth in collaboration with WP1. Research activities may include numerical simulations of crystal growth mechanisms, thermodynamics, heat and mass transport, fluid dynamics, and growth kinetics. The candidate will also participate in developing a digital twin of the ammonothermal growth process by integrating physics-based models, experimental data, and predictive approaches. Using data science, machine learning (ML), and artificial intelligence (AI) methods, the team will investigate relationships between technological process parameters, material properties, defect formation, and crystal quality to support process optimization and predictive modeling.

In the area of epitaxial growth and doping technologies, the candidate will closely collaborate with experimental teams working on MOCVD, HVPE, ion implantation, and ultra-high-pressure annealing (UHPA). A solid understanding of epitaxial processes and defect formation mechanisms will be important for developing reliable simulation strategies and supporting technology optimization. The ability to combine theoretical modeling with hands‑on experimental research will be particularly valued.

The candidate will collaborate with researchers across WP1–WP3, contribute to interdisciplinary scientific publications, and present research results at international conferences.

Specific Requirements

Profile of candidates/requirements:

• PhD degree in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline (obtained not earlier than 3 years before the application deadline, in line with the JPR profile);
• Documented publication record in peer-reviewed journals (at least 5 publications), appropriate to the candidate's career stage.
• Strong background in solid‑state physics, quantum mechanics, and materials science.
• Knowledge of materials physics, including crystal structure, electronic structure, defects, phase stability, and the physical properties of crystalline materials and alloys.
• Research experience in theoretical, computational, or experimental investigations of materials, preferably involving semiconductor materials.
• Experience in theoretical or numerical modeling, including practical use of at least one advanced computational package (e.g., VASP, Quantum ESPRESSO, SIESTA, or equivalent).
• Experience working in high‑performance computing (HPC) environments.
• Programming skills in Python or other scientific programming languages, with familiarity with numerical computing and data analysis tools (e.g., NumPy, SciPy, pandas, or equivalent).
• Ability to relate theoretical modeling to experimental observations and willingness to collaborate closely with experimental teams.
• Good command of written and spoken English.

Preferred Qualifications:

• Research experience with GaN, related III‑nitrides, or other wide‑bandgap semiconductor materials.
• Experience in first‑principles calculations of structural, electronic, mechanical, or thermodynamic properties of materials, including investigations of relationships between atomic structure and macroscopic material properties.
• Hands‑on experience in crystal growth or materials characterization (e.g., structural, optical, or electrical characterization).
• Demonstrated ability to combine theoretical calculations with experimental investigations.
• Familiarity with image analysis tools (e.g., OpenCV, scikit‑image) and machine learning libraries (e.g., scikit‑learn, PyTorch).
• Knowledge of the Polish language.

Languages ENGLISH Level Good

Languages POLISH Level Good

Research Field Physics Years of Research Experience 1 - 4

Research Field Engineering » Materials engineering Years of Research Experience 1 - 4

Additional Information

Selection process

Required documents:

• Detailed Curriculum Vitae (maximum 3 A4 pages; font size not smaller than 9 pt; single line spacing; margins not smaller than 1.5 cm), including a list of publications and a summary of scientific achievements.
• Cover/motivation letter (maximum 1 A4 page; formatting rules as above), including a concise summary of scientific accomplishments (maximum 3,500 characters, including spaces), a brief description of research interests and motivation for applying, and the earliest possible starting date.
• Copy of the PhD diploma or an official document confirming the award of the doctoral degree.
• Contact details of at least one academic referee (reference letters may be requested at a later stage of the selection process).
• Signed personal data processing statement (GDPR clause).

All documents must be submitted in English in PDF format. Applications that do not comply with the formal requirements may be excluded from further consideration.

Personal data protection clause (GDPR)

Due to the entry into force of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 (General Data Protection Regulation – GDPR), we require that your application includes a statement of consent to the processing of your personal data by the institution conducting the recruitment process.

To allow us to process your data, please include the following statement in your application:

“I hereby consent to the processing of my personal data by the Institute of High Pressure of the Polish Academy of Sciences, with its registered office at Sokolowska 29/37, 01-142 Warsaw, Poland, for the purpose of carrying out the recruitment process, selecting a candidate, and concluding an employment contract at the Institute of High Pressure of the Polish Academy of Sciences. I have been informed of my rights and obligations. I understand that the provision of my personal data is voluntary.”

In accordance with Article 13 of Regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016 on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (Official Journal of the EU L119/1 of 4 May 2016), the Institute of High Pressure of the Polish Academy of Sciences informs that:

• The Controller of your personal data is the Institute of High Pressure of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
• The Controller has appointed a Data Protection Officer who supervises the processing of personal data and can be contacted at: [e-mail] .
• Your personal data will be processed for the purpose of conducting the recruitment process, selecting a candidate, and concluding an employment contract with the Institute of High Pressure of the Polish Academy of Sciences.
• The provided data will be processed pursuant to Article 221 §1 of the Act of 26 June 1974 – Labour Code (uniform text: Journal of Laws of 2018, item 917) and on the basis of your consent.
• Provision of data within the scope required by the Labour Code is mandatory, while the remaining data are processed on the basis of your consent.
• The data will not be shared with external entities.
• The data will be stored until you withdraw your consent to their processing.
• You have the right to access your personal data, to rectify or erase them, to restrict their processing, to object to processing, and to withdraw your consent at any time.
• You have the right to lodge a complaint with the President of the Office for Personal Data Protection.

Additional comments

The project “Center for Nitride Semiconductor Physics and Technology – GaN-Unipress” focuses on advanced research and technology development of gallium nitride (GaN) materials and devices for power electronics and quantum applications. The program integrates bulk GaN crystal growth using the ammonothermal method, advanced epitaxial techniques (MOVPE, HVPE, MBE), ion implantation with ultra‑high‑pressure annealing, and AI/ML-supported process optimization.

The research activities are organized into four interacting work packages: (WP1) growth and processing of high‑quality GaN substrates, (WP2) development of GaN‑based power diodes (p–n, p–i–n and Schottky structures), (WP3) rare‑earth‑doped GaN structures for single‑photon sources and quantum sensing, and (WP4) data‑driven optimization of materials growth and device fabrication processes.

The project aims not only to advance the scientific understanding of GaN materials, but also to develop mature technological processes and deliver validated device structures and demonstrators ready for further industrial implementation.