Principal Power Semiconductor Failure Analysis Lead

Advanced Energy Management Limited

Malaysia

Hybrid

MYR 180,000 - 300,000

Full time

11 days ago
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Benefits offered by this job

Medical plan
Disability & Life Insurance
Health screening program
Paid time off 15 days + 19 holidays
Maternity/Paternity leave

Job summary

Advanced Energy Malaysia is seeking a highly experienced Principal Power Semiconductor Device Engineer to serve as the technical authority for failure analysis, RCCA, and reliability investigations across Advanced Energy business units.

The role leads complex investigations of MOSFET, IGBT, SiC, and GaN failures in power supplies, collaborating with CQE, SQE, CFA, design and manufacturing teams to identify root causes and implement corrective actions.

Qualifications

  • Bachelor's degree in Electrical Engineering (BSEE) or equivalent engineering discipline.
  • Advanced degree (MSEE or PhD) preferred.

Responsibilities

  • Lead complex root cause investigations involving MOSFET, IGBT, diode, rectifier, SiC, and GaN component failures.
  • Drive 8D, RCCA, CAR, and CAPA activities for field returns, customer complaints, and manufacturing failures.
  • Determine and validate failure mechanisms through analytical investigation and data-driven problem solving.
  • Develop technical conclusions supported by laboratory evidence, electrical characterization, and FA results.
  • Establish corrective and preventive actions to eliminate recurring semiconductor failure mechanisms.
  • Present technical findings to executive management, customers, suppliers, and cross-functional teams.

Skills

Root cause analysis
Cross-functional collaboration
Technical leadership

Education

BSEE or equivalent
MSEE/PhD preferred

Job description

Advanced Energy Malaysia is seeking a highly experienced Principal Power Semiconductor Device Engineer to serve as the technical authority for failure analysis, RCCA, and reliability investigations across Advanced Energy business units.

The role leads complex investigations of MOSFET, IGBT, SiC, and GaN failures in power supplies, collaborating with CQE, SQE, CFA, design and manufacturing teams to identify root causes and implement corrective actions.

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