R&D – Head of Embedded NVM Technologies

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JR Italy
Siena
EUR 100.000 - 140.000
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R&D – Head of Embedded NVM Technologies, Siena

Client: Theron Solutions

Location:

Job Category: Other

EU work permit required: Yes

Job Reference:

4287033516446711808337159

Job Views:

2

Posted:

26.04.2025

Expiry Date:

10.06.2025

Job Description:

THIS ROLE REQUIRES A RELOCATION TO DHOLERA, INDIA once the FAB is built.

Responsibilities:

  1. Integration responsibilities to add eNVM (embedded Non Volatile Memory) features to 28 110nm platform technologies including MTP and Flash. Work with IP providers, as needed, to implement these features.
  2. Design and layout of test chips to aid in device/technology optimization, reliability assessment, and SPICE model extraction.
  3. End-to-end project management from initial project justification to final qualification and yield ramp, with responsibilities for achieving desired performance, quality/yield, schedule, and cost targets.
  4. Build and lead a cross-functional team across diverse geographies.
  5. Build strong customer relationships based on confidence in the company's technical capabilities.
  6. Conduct competitor benchmarking; own the technology roadmap.
  7. Present to internal and customer senior executives.
  8. Possible involvement in OTP development.
  9. Travel (few weeks per quarter).

Additional qualities:

  • Ability to manage, mentor, and lead a team of highly motivated professionals.
  • Able to work independently, self-motivated with a strong drive to win.
  • Team player with the ability to work across diverse cross-functional teams spread across the world.
  • Leadership skills to influence all levels of the organization.
  • Inclusive, adaptable to different situations and diverse global norms.
  • An avid learner, approaching challenges with curiosity and resilience, seeking data to build understanding.
  • Collaborative, building relationships, offering support, and welcoming approaches.
  • Innovative and creative, proactively exploring new ideas and adapting quickly to change.

Qualifications:

  1. M.S or PhD in Electrical Engineering, Materials Science, or equivalent.
  2. Strong understanding of CMOS and eNVM device physics, process modules, yield improvement, failure mechanisms, analytical techniques (physical and electrical).
  3. Deep understanding of key eNVM technologies (charge trap, floating gate, RRAM, MRAM, etc.).
  4. Understanding of technology parameters and figures of merit (bit cell size, macro size, endurance, retention, power, latency, mask count, etc.); experience in achieving competitive performance.
  5. Proven track record in delivering these technologies into volume manufacturing.
  6. Ability to lead cross-functional teams and achieve project completion within timeline and cost targets.
  7. Ability to work across different cultures and geographies.
  8. Good team player.
  9. Innovation and competitive mindset.

Desired Experience Level:

  1. 15+ years of experience in the semiconductor industry.
  2. Proven track record of successfully developing new technologies into high volume production.
  3. Proven problem-solving skills using design of experiments and analytical tools.

EOE:

Our client is an Equal Opportunity Employer and Prohibits Discrimination and Harassment of Any Kind: We are committed to the principle of equal employment opportunity for all employees and to providing employees with a work environment free of discrimination and harassment. All employment decisions at our client are based on business needs, job requirements, and individual qualifications, without regard to race, color, religion or belief, national, social or ethnic origin, sex (including pregnancy), age, physical, mental or sensory disability, HIV Status, sexual orientation, gender identity and/or expression, marital, civil union or domestic partnership status, past or present military service, family medical history or genetic information, family or parental status, or any other status protected by law. We will not tolerate discrimination or harassment based on any of these characteristics.

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