Development of memory devices with 2D semiconductors - 2026_IDR_DEIB_68

Italian Ministry of Education, University and Research; Italia; On-site; EUR 28,000 - 32,000; Full time

Job summary

Politecnico di Milano invites applications for a research fellowship to develop memory devices with 2D semiconductors (MoS2, WS2) for stand-alone and embedded memories. The project combines device fabrication in the clean room, electrical characterization and the development of accurate numerical models.

The fellowship assesses publications, theses and scientific outputs involved in the programme, with a focus on relevance to the proposed research work and prior related activity.

Qualifications

• PhD required or equivalent research experience in a relevant field.
• Experience with 2D materials like MoS2 or WS2 is highly desirable.
• Strong communication and collaboration skills for interdisciplinary teams.

Responsibilities

• Conduct research on memory devices using 2D semiconductors.
• Fabricate devices in a clean room and perform electrical characterisation.
• Develop and validate numerical models for device performance.

Skills

Device fabrication

Electrical characterization

Numerical modelling

2D materials

Education

PhD in Physics/Materials Science/Engineering

Tools

Clean room techniques

Electrical measurement equipment

Job description

Organisation/Company Politecnico di Milano Research Field Engineering Researcher Profile Recognised Researcher (R2) Leading Researcher (R4) First Stage Researcher (R1) Established Researcher (R3) Application Deadline 24 Nov 2026 - 12:00 (UTC) Country Italy Type of Contract To be defined Job Status Not Applicable Is the job funded through the EU Research Framework Programme? Horizon 2020 Is the Job related to staff position within a Research Infrastructure? No

Offer Description

The research program aims at the development of memory devices with 2D semiconductors such as MoS2 and WS2 for application in stand-alone, embedded memories and neuromorphic computing circuits. The ultimate goal is the demonstration of a nonvolatile memory with high retention, cycling endurance and multilevel storage of information. The research activity consists of the device fabrication in the clean room, electrical characterization and development of accurate numerical models.

Relevance and pertinence of the publications, theses and scientific products attached to the research programme covered by the Fellowship (up to 30 points)

Relevance and pertinence of previous research activities and work experience, if any, in relation to the research activity covered by the Fellowship (up to 50 points)

Relevance and pertinence of their study programme to the research programme covered by the Fellowship (up to 20 points)

• EUROPE

Eligibility of fellows: country/ies of residence:

• All

Eligibility of fellows: nationality/ies: