Senior Device Engineer

Navitas Semiconductor; Maharashtra; On-site; INR 1,500,000 - 2,700,000; Full time

Job summary

Navitas Semiconductor is seeking a Senior Device Engineer to join the GaN Technology Development team in India. You will contribute to research, design, and development of next‑generation GaN-based power devices for high‑power conversion applications.

You will collaborate with cross‑functional engineers and foundry partners, applying device physics, TCAD, electrical characterization, and data‑driven analysis to advance scalable GaN technologies with robust performance.

Qualifications

• PhD in EE or MS with 4+ years in industry or academia.
• Strong foundation in semiconductor device physics and power/wide-bandgap tech.
• Hands-on experience with TCAD tools and electrical characterization.
• Proficiency in Python or MATLAB for analysis and automation.
• Excellent problem-solving and communication, both written and verbal.
• Experience collaborating with cross-functional teams.

Responsibilities

• Support design and optimization of enhancement-mode GaN HEMTs for high-power apps.
• Research novel device architectures to improve device performance and robustness.
• Plan and run DOE to evaluate device structures and options.
• Perform TCAD simulations to model device behavior.
• Lead on-wafer electrical characterization to advance tech development.
• Analyze wafer/package data to identify performance limits and improvements.
• Collaborate with foundry partners on device/process tradeoffs.
• Document findings and present results to cross-functional teams.

Skills

Semiconductor physics

TCAD analysis

Electrical characterization

Python / MATLAB

Data interpretation

Communication skills

Education

PhD in Electrical Engineering

MS in EE with 4+ years experience

Tools

Synopsys Sentaurus

Silvaco Atlas

Job description

Position Summary

We are seeking a highly motivated Senior Device Engineer to join our GaN Technology Development team and contribute to the research, design, and development of next‑generation advanced GaN‑based power devices. In this role you will help develop innovative device architectures and advance existing technology platforms to enable robust, high‑performance GaN devices for power conversion applications.

We will work closely with cross‑functional engineering teams and foundry partners, applying semiconductor device physics, TCAD simulation, electrical characterization, and data‑driven analysis to help develop scalable, manufacturable GaN technologies.

Key Responsibilities

• Support the design, development, and optimization of enhancement‑mode GaN HEMTs for high‑power applications.
• Research and evaluate novel device architectures to improve electrical performance, manufacturability, and long‑term robustness.
• Assist in planning and executing Design of Experiments (DOE) to evaluate new device structures, layouts, and technology options.
• Perform TCAD simulations to characterize and predict device behavior.
• Support on‑wafer electrical characterization to advance technology development.
• Analyze wafer‑ and package‑level electrical data to identify performance limitations and support device optimization.
• Collaborate with foundry partners to evaluate device and process tradeoffs affecting yield, reliability, and manufacturability.
• Document findings, prepare engineering reports, and present results to cross‑functional teams.

Required Qualifications

• Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field; or M.S. in one of these fields with 4+ years of relevant industry experience.
• Strong foundation in semiconductor device physics, power devices, and wide‑bandgap semiconductor technologies.
• Hands‑on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco Atlas, or equivalent).
• Experience with electrical characterization and data interpretation for semiconductor devices.
• Programming experience in Python, MATLAB, or similar languages for engineering analysis and automation.
• Strong analytical, problem‑solving, and communication skills, both written and verbal.

Preferred Qualifications

• Research experience with high‑power GaN devices (academic or industry).
• Working knowledge of semiconductor reliability mechanisms and their influence on device design.
• Exposure to designing or analyzing DOEs for device development.
• Familiarity with semiconductor failure analysis techniques.
• Publications, patents, conference presentations, or other technical contributions from graduate research.