Senior Device Design Engineer

L&T Semiconductor Technologies; Bengaluru; On-site; INR 1,800,000 - 3,200,000; Full time

Job summary

L&T Semiconductor Technologies in Bengaluru, India seeks a senior design lead for SiC and GaN power devices. You will steer R&D on next‑gen MOSFETs, diodes, and related architectures for automotive and industrial applications, with emphasis on performance, reliability, and cost targets.

The role requires 6–10 years in power device design, deep TCAD proficiency, and collaboration across internal teams and external foundries. Strong emphasis on reliability and advanced characterization.

Qualifications

• Minimum 6–10 years of experience in power semiconductor device design.
• Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.
• Advanced knowledge of semiconductor device physics and wide bandgap materials.
• Expert-level TCAD simulation and model calibration experience.
• Experience in device layout development and mask design.
• Strong understanding of silicon correlation and electrical characterization.
• Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.
• Experience in JMP, Minitab, or other statistical tools.
• Familiarity with JEDEC and AEC-Q101 qualification standards.
• Experience collaborating with external foundries is desirable.
• Patent contributions or published technical work are desirable.

Responsibilities

• Lead the design and optimization of next‑generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
• Benchmark critical design parameters across voltage nodes.
• Research and evaluate novel architectures to improve performance and reliability.
• Define device architectures to meet electrical, thermal, reliability, and cost targets.
• Support TCAD process and device model calibration using experimental data.
• Design reliable edge termination structures for high and ultra‑high voltage applications.
• Lead prototype evaluation, electrical characterization, and silicon debug with Failure Analysis and Reliability teams.
• Optimize device designs considering process variation, manufacturability, and long‑term reliability.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundries during development.
• Support IP generations, technical report writing, and research publications.
• Provide technical guidance to junior engineers and review deliverables.
• Communicate complex ideas clearly to cross‑functional and leadership teams.

Skills

SiC MOSFETs

SiC diodes

GaN HEMTs

Device physics

Electrical characterization

Reliability analysis

Statistical tools

Foundry collaboration

Thermal/electrical testing

Education

MS/PhD in Electrical Engineering, Microelectronics, or related

Tools

TCAD simulation

Mask design

JMP

Minitab

Job description

• Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
• Benchmarking of critical design parameters in and across the voltage nodes.
• Research and evaluate novel architectures to improve performance and reliability.
• Define device architectures to achieve electrical, thermal, reliability, and cost targets.
• Support development and calibration of TCAD process and device simulation models using experimental characterization data.
• Design reliable edge termination structures for high and ultra-high voltage applications.
• Lead prototype evaluation, electrical characterization, and silicon debug activities in collaboration with Failure Analysis and Reliability teams.
• Optimize device designs considering process variation, manufacturability, and long-term reliability.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams throughout product development.
• Support in IP generations, technical report writing, and research publications.
• Provide technical guidance to junior engineers and review technical deliverables.
• Clear communication of complex technological ideas to cross functional and leadership teams.

Requirements

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.
• 6-10 years of experience in power semiconductor device design.
• Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.
• Advanced knowledge of semiconductor device physics and wide bandgap materials.
• Expert-level experience with TCAD simulation and model calibration.
• Experience in device layout development and mask design.
• Strong understanding of silicon correlation and electrical characterization.
• Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.
• Experience in JMP, Minitab, or other statistical tools.
• Familiarity with JEDEC and AEC-Q101 qualification standards.
• Experience collaborating with external foundries are desirable.

Patent contributions or published technical work are desirable