Sr. SiC and GaN Device Characterization Engineer

Navitas Semiconductor; Maharashtra; On-site; INR 1,000,000 - 1,500,000; Full time

Job summary

Navitas Semiconductor is seeking a highly motivated SiC and GaN Device Characterization Engineer to lead the electrical characterization of silicon carbide and gallium nitride power semiconductor devices. The ideal candidate will have strong expertise in high-voltage testing, device physics, and test methods for wide-bandgap devices.

This role involves performing electrical characterization across various conditions, collaborating with multiple teams, and developing automated methodologies. A MS/PhD in a relevant field is preferred, along with hands-on testing experience.

Qualifications

• 1-3 years of experience in power semiconductor characterization, reliability or test engineering.
• Strong understanding of SiC and GaN device physics.
• Hands-on experience with semiconductor test instrumentation.

Responsibilities

• Perform electrical characterization of SiC and GaN power devices.
• Develop and execute characterization plans for electrical performance.
• Collaborate with process, design, packaging, and reliability teams.

Skills

Electrical characterization

High-voltage/high-temperature testing

Statistical data analysis

Problem-solving capability

Education

MS/PhD in Electrical Engineering, Materials Science, or Physics

Tools

Keysight Technologies parametric analyzers

High-voltage SMUs

Oscilloscopes

Python

Excel

Job description

We are seeking a highly motivated SiC and GaN Device Characterization Engineer to lead electrical characterization of silicon carbide and gallium nitride power semiconductor devices including MOSFETs, JFETs, and power modules. The engineer will support technology teams for all new technology characterization, robustness measurements, FOM validation and competitor benchmarking through device testing and data analysis.

The ideal candidate will have strong expertise in high-voltage/high-temperature semiconductor characterization, power device physics, and test methods for wide-bandgap devices.

Key Responsibilities

• Perform electrical characterization of SiC and GaN power devices across temperature, voltage, and switching conditions.
• Develop and execute characterization plans for:
• Static electrical performance (BVdss, leakage, Vth, RDS(on), transfer/output curves)
• Dynamic switching performance (Qg, switching losses, dv/dt, di/dt, short‑circuit, avalanche robustness)
• Characterize SiC JFET/MOSFETs under DC and switching stress.
• Analyze device behavior under gate‑drain, drain‑source, and transient stress conditions.
• Collaborate with process, design, packaging, and reliability teams to optimize device performance and robustness.
• Drive correlation studies between wafer‑level, package‑level, and system‑level electrical performance.
• Develop automated characterization methodologies using scripting and test automation tools.
• Generate technical reports, and engineering recommendations for design reviews and product qualification.

Qualifications

• MS/PhD (preferred) in Electrical Engineering, Materials Science, Physics, or related discipline
• 1-3 years of experience in power semiconductor characterization, reliability or test engineering
• Strong understanding of SiC and GaN device physics, MOSFETs, JFET operation
• Hands‑on experience with semiconductor test instrumentation such as: Keysight Technologies parametric analyzers (e.g., B1505), Curve tracers, High‑voltage SMUs, Oscilloscopes, Double‑pulse test systems, Thermal chambers and HTRB systems
• Experience analyzing large characterization datasets using Python, JMP, Excel
• Strong statistical data analysis and problem‑solving capability

Preferred Qualifications

• Experience with power modules and package interactions.
• Experience with defect screening, failure analysis, and reliability acceleration modeling
• Experience with DOE, SPC, Weibull analysis, and degradation modeling