DTMA & Memory Controller Design Lead

Larsen & Toubro Limited

Bengaluru

On-site

INR 6,000,000 - 8,500,000

Full time

13 days ago

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Job summary

L&T Semiconductor Technologies Limited in Bangalore, India, seeks a Design Lead for DTMA and memory controller design to own the DTMA engine and its integration with HBM4e across multi-stack configurations.

You will orchestrate data movement between SRAM banks, HBM4e, and PE arrays, while optimizing bandwidth and scheduling. A senior candidate with 10+ years of relevant experience will lead cross-functional teams and drive performance modeling.

Qualifications

  • 10+ years in memory-subsystem, DMA, or memory-controller design for high-bandwidth SoCs.
  • Deep expertise with DRAM/HBM controller architecture, scheduling, and timing (HBM2E/HBM3/HBM3E; HBM4e a strong plus).
  • Strong RTL (SystemVerilog) design skills for DMA engines, arbiters, and memory schedulers.
  • Solid understanding of multi-bank SRAM architectures, banking/interleaving, and conflict resolution.
  • Experience with descriptor-based DMA, gather/scatter, tensor tiling, and prefetching.
  • Knowledge of address mapping, request reordering, and bandwidth/efficiency optimization.
  • Familiarity with AI/ML data-movement patterns and their impact on memory-system design.
  • Hands-on performance modeling and closure for high-bandwidth memory subsystems.
  • Proficiency in C/C++/Python for modeling and verification.
  • Proven technical leadership and cross-functional collaboration.

Responsibilities

  • Own micro-architecture and RTL of the DTMA engine managing data movement between SRAM banks, HBM4e, and the BFOS PE arrays.
  • Define the compute-to-memory interface with the DTMA engine and SRAM banks to keep PE arrays fully fed at bandwidth.
  • Lead integration and configuration of HBM4e memory controllers across 6 stacks (384 GB, 12 TB/s aggregate).
  • Design descriptor-based DMA, gather/scatter, tensor tiling, and prefetch mechanisms optimized for BFOS dataflow.
  • Architect the 512-bank, 8 TB/s SRAM access scheduling, bank arbitration, and conflict-avoidance logic.
  • Optimize address mapping, request scheduling, and refresh/timing to maximize sustained HBM bandwidth efficiency.
  • Define QoS and flow-control interfaces to the NoC and compute engine to prevent stalls and starvation.
  • Drive verification, performance modeling, and bandwidth/latency closure across realistic AI workload traffic.
  • Collaborate with PD on HBM PHY/controller placement and with architecture on memory-hierarchy trade-offs.

Skills

Memory-subsystem design
DMA design
RTL SystemVerilog
Performance modeling
C/C++/Python modeling
Leadership
HBM4e memory controller
Cross-functional collaboration

Education

M.Tech/MS in EE/ECE

Tools

SystemVerilog

Job description

  • LTST-L&T Semiconductor Technologies Limited

Posted On 09 Oct 2026

End Date 07 Apr 2027

Required Experience 10 - 18 years

Knowledge & Posting Location

RTL

BE

Job Description

DTMA & Memory Controller Design Lead

Location: Bangalore, India | Company: LTSCT - L&T Semiconductor Technologies Limited

Reporting To: Chandra - Senior Architect, DC HW Systems | Experience: 10+ years (mandatory)

Role Summary The DTMA & Memory Controller Design Lead owns the Data Transfer and Memory Access (DTMA) engine together with HBM4e memory-controller integration. You will orchestrate all data movement between the 512-bank SRAM (8 TB/s), the 6-stack HBM4e subsystem (384 GB, 12 TB/s), and the PE arrays - the subsystem that keeps xPU's compute engine saturated.

Key Responsibilities
  • Own micro-architecture and RTL of the DTMA engine managing data movement between SRAM banks, HBM4e, and the BFOS PE arrays.
  • Define the compute-to-memory interface with the DTMA engine and SRAM banks to keep PE arrays fully fed at bandwidth.
  • Lead integration and configuration of HBM4e memory controllers across 6 stacks (384 GB, 12 TB/s aggregate).
  • Design descriptor-based DMA, gather/scatter, tensor-tiling, and prefetch mechanisms optimized for BFOS dataflow.
  • Architect the 512-bank, 8 TB/s SRAM access scheduling, bank arbitration, and conflict-avoidance logic.
  • Optimize address mapping, request scheduling, and refresh/timing to maximize sustained HBM bandwidth efficiency.
  • Define QoS and flow-control interfaces to the NoC and compute engine to prevent stalls and starvation.
  • Drive verification, performance modeling, and bandwidth/latency closure across realistic AI workload traffic.
  • Collaborate with PD on HBM PHY/controller placement and with architecture on memory-hierarchy trade-offs.
Required Skills & Experience
  • 10+ years in memory-subsystem, DMA, or memory-controller design for high-bandwidth SoCs.
  • Deep expertise with DRAM/HBM controller architecture, scheduling, and timing (HBM2E/HBM3/HBM3E; HBM4e a strong plus).
  • Strong RTL (SystemVerilog) design skills for DMA engines, arbiters, and memory schedulers.
  • Solid understanding of multi-bank SRAM architectures, banking/interleaving, and conflict resolution.
  • Experience with descriptor-based DMA, gather/scatter, tensor tiling, and prefetching.
  • Knowledge of address mapping, request reordering, and bandwidth/efficiency optimization.
  • Familiarity with AI/ML data-movement patterns and their impact on memory-system design.
  • Hands-on performance modeling and closure for high-bandwidth memory subsystems.
  • Proficiency in C/C++/Python for modeling and verification.
  • Proven technical leadership and cross-functional collaboration.
Preferred Qualifications
  • Experience integrating HBM PHY/controller IP on advanced nodes.
  • Background in AI accelerator or HPC memory subsystems.
  • Familiarity with UCIe/NoC traffic interaction with memory controllers.
  • M.Tech/MS in EE/ECE or equivalent.
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