Senior TCAD Engineer - Power MOSFET Devices

Nexperia; Manchester; Hybrid; GBP 90,000 - 130,000; Full time

Benefits offered by this job

Salary incentives up to 20%

Contributory pension scheme

Hybrid and on-site work

Job summary

Nexperia in Manchester is hiring a Principal Device Engineer to drive TCAD-based development of Power Trench MOSFET technologies. You will lead simulations, analyze trade-offs, and translate results into process and layout requirements. Collaborate across Process Integration, Product Development, Design, Manufacturing and Foundry partners.

The role requires deep device physics knowledge, TCAD tool expertise (Sentaurus) and several years of experience in device engineering, with occasional travel.

Qualifications

• Several years of device engineering and TCAD-based development.
• Strong understanding of semiconductor device physics.
• Experience with Power MOSFET concepts, ideally trench-based.

Responsibilities

• Lead TCAD-driven development and optimisation of Power Trench MOSFET technologies.
• Perform electrostatic, thermal and reliability simulations to guide device decisions.
• Design and refine cell structures, termination schemes, and next-generation device concepts.
• Support technology roadmaps with quantitative trade-off and feasibility analysis.
• Translate simulation insights into process, layout and structural requirements.

Skills

TCAD experience

Semiconductor physics

Power MOSFET concepts

Synopsys Sentaurus

Analytical mindset

Travel willingness

Education

MSc/PhD in Electrical Engineering or Physics

Tools

TCAD tools (Sentaurus)

Job description

Nexperia in Manchester is hiring a Principal Device Engineer to drive TCAD-based development of Power Trench MOSFET technologies. You will lead simulations, analyze trade-offs, and translate results into process and layout requirements. Collaborate across Process Integration, Product Development, Design, Manufacturing and Foundry partners.

The role requires deep device physics knowledge, TCAD tool expertise (Sentaurus) and several years of experience in device engineering, with occasional travel.