Postdoc: AlGaN MOVPE Growth for High-Power Devices

University of Cambridge; Cambridge; On-site; GBP 38,000 - 47,000; Full time

Job summary

The University of Cambridge, through the Cambridge Centre for Gallium Nitride, seeks a Post-doctoral Research Associate to lead growth of AlGaN and related nitride materials using MOVPE, and to contribute to epitaxy and device aspects within a dynamic, collaborative environment.

You will advance fundamental understanding, present at international forums, supervise student researchers, and participate in the broader EPSRC UltrAlGaN programme, with opportunities for basic device fabrication.

Qualifications

• Hold a Ph.D. in Materials Science, Physics, Electrical Engineering, or a related area, or be nearing completion of one.
• Extensive experience in crystal growth, preferably using MOVPE.
• Track record of research on nitride semiconductors or related materials.
• Experience in characterisation techniques such as XRD, SEM, PL, TEM, or related methods.

Responsibilities

• Manage research activities, generate high-quality data, and develop scientific techniques.
• Contribute intellectually to the direction of the nitride research within the Centre.
• Present data at lab meetings, seminars, and international conferences.
• Draft scientific manuscripts with support from Prof. Oliver and supervise Masters/PhD students.

Skills

MOVPE growth

nitride materials

data presentation

team collaboration

Education

PhD in Materials Science/Physics/Engineering

Job description

The University of Cambridge, through the Cambridge Centre for Gallium Nitride, seeks a Post-doctoral Research Associate to lead growth of AlGaN and related nitride materials using MOVPE, and to contribute to epitaxy and device aspects within a dynamic, collaborative environment.

You will advance fundamental understanding, present at international forums, supervise student researchers, and participate in the broader EPSRC UltrAlGaN programme, with opportunities for basic device fabrication.