PDRA on UltrAlGaN

University of Cambridge; Cambridge; On-site; GBP 38,000 - 47,000; Full time

Job summary

The University of Cambridge, through the Cambridge Centre for Gallium Nitride, seeks a Post-doctoral Research Associate to lead growth of AlGaN and related nitride materials using MOVPE, and to contribute to epitaxy and device aspects within a dynamic, collaborative environment.

You will advance fundamental understanding, present at international forums, supervise student researchers, and participate in the broader EPSRC UltrAlGaN programme, with opportunities for basic device fabrication.

Qualifications

• Hold a Ph.D. in Materials Science, Physics, Electrical Engineering, or a related area, or be nearing completion of one.
• Extensive experience in crystal growth, preferably using MOVPE.
• Track record of research on nitride semiconductors or related materials.
• Experience in characterisation techniques such as XRD, SEM, PL, TEM, or related methods.

Responsibilities

• Manage research activities, generate high-quality data, and develop scientific techniques.
• Contribute intellectually to the direction of the nitride research within the Centre.
• Present data at lab meetings, seminars, and international conferences.
• Draft scientific manuscripts with support from Prof. Oliver and supervise Masters/PhD students.

Skills

MOVPE growth

nitride materials

data presentation

team collaboration

Education

PhD in Materials Science/Physics/Engineering

Job description

Post-doctoral Research Associate – MOVPE Growth of Nitride Materials for Power Electronics

We are seeking a talented and creative postdoctoral researcher to work in the Cambridge Centre for Gallium Nitride, performing growth of nitride materials and devices for applications in power electronics and characterising the resulting materials. The Cambridge Centre for Gallium Nitride is part of the Department of Materials Science and Metallurgy at the University of Cambridge and also leads the nitride activity within the EPSRC National Epitaxy Facility.

This post is available under the UltrAlGaN Programme Grant (EPSRC) in collaboration with the University of Bristol and other partners. The broad objective of the Programme is the development of high‑performance AlGaN solid‑state circuit breakers (SSCBs). In this context, the successful candidate will contribute to research on the growth of aluminium and nitrogen‑polar AlGaN, the growth of graded AlGaN layers, the regrowth of AlGaN, growth on bulk AlN substrates, and the realisation of doping in AlGaN, in particular polarisation doping. The project team also includes the capability for growth by molecular beam epitaxy (MBE), and the successful candidate will exhibit enthusiasm for collaboration across the two growth technologies to achieve optimised materials. The role may also present the opportunity for basic device fabrication to facilitate epitaxy characterisation, and hence experience of device fabrication is desirable.

Responsibilities:

• Manage research activities, generate high-quality data, and develop scientific techniques.
• Contribute intellectually to the direction of the nitride research within the Centre.
• Present data locally at lab meetings and seminars, and more widely at international scientific conferences.
• Draft scientific manuscripts with support from Prof Oliver and contribute to the day‑to‑day supervision of Masters or PhD students.

Requirements:

• Hold a Ph.D. in Materials Science, Physics, Electrical Engineering, or a related area, or be nearing completion of one.
• Extensive experience in crystal growth, preferably using metal‑organic vapour phase epitaxy (MOVPE).
• A track record of research on nitride semiconductors or closely related materials.
• Well-versed in a range of techniques for the characterisation of the structure and properties of materials, with experience in two or more of the following techniques: scanning probe microscopy, x‑ray diffraction, scanning electron microscopy, cathodoluminescence spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, Hall probe measurements, or C‑V measurements. Candidates with in‑depth expertise in scanning probe microscopy are particularly encouraged to apply.
• Skills in data presentation, both verbally and in writing.
• Committed to collaborative and interdisciplinary research and able to work both independently and as part of a team.

Applications are particularly welcome from women, black, and minority ethnic candidates.

The salary range if appointed as a Research Associate is Grade 7 £38,448 - £46,970 per annum (SP041-048), Successful candidates who have not yet received their PhD will be employed on University Grade 5 SP038 (£35,302 per annum) as Research Assistants. Upon being awarded their PhD, their salary will be upgraded to Grade 7 041 as Research Associates.

Fixed‑term: The funds for the post are available for 24 months in the first instance.

For more information about the Cambridge Centre for Gallium Nitride, visit https://www.gan.msm.cam.ac.uk/.

Should you have any queries please reach out to [e-mail] with a copy to [e-mail].

Please quote reference LJ51505 on your application and in any correspondence about this vacancy.

The University actively supports equality, diversity and inclusion and encourages applications from all sections of society.

The University has a responsibility to ensure that all employees are eligible to live and work in the UK.