Lead RFIC Design Engineer – 5G & Broadband Transceivers

Sequans Communications

Greater London

On-site

GBP 120,000 - 160,000

Full time

12 days ago
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Job summary

Sequans Communications is seeking a Principal-level RFIC design engineer to join a dynamic RFIC design team. You will lead the specification, design and verification of key circuits and sub-systems for next generation 5G wireless transceivers, and mentor junior engineers.

You will collaborate with Software, Signal Processing, Product Integration, Sales & Marketing to drive design execution and ensure manufacturability on cutting‑edge nanometer RF‑CMOS processes, across European design centers.

Qualifications

  • Engineering degree; MSc or PhD preferred
  • 15+ years’ IC development experience
  • RFIC contributions on broadband wireless transceivers (WiFi/LTE) on nanometer RF-CMOS processes
  • Understanding of low power/low noise analog/RF design techniques
  • DFM considerations for cutting-edge processes
  • RF and baseband layout techniques
  • Experience mentoring and directing others

Responsibilities

  • Specify, design and verify key circuits and sub-systems of integrated RF transceivers
  • Collaborate with Software, Signal Processing, Product Integration, Sales & Marketing to enable design and production
  • Provide broad technical expertise and mentor junior engineers within the team

Skills

Multi-band RF circuit design
Cadence tools
RF lab equipment familiarity
Mentoring teammates
Cross-functional collaboration

Education

MSc or PhD in relevant discipline
Bachelor’s degree in related field

Tools

Cadence
RF test equipment
Lab instruments

Job description

Sequans Communications is seeking a Principal-level RFIC design engineer to join a dynamic RFIC design team. You will lead the specification, design and verification of key circuits and sub-systems for next generation 5G wireless transceivers, and mentor junior engineers.

You will collaborate with Software, Signal Processing, Product Integration, Sales & Marketing to drive design execution and ensure manufacturability on cutting‑edge nanometer RF‑CMOS processes, across European design centers.

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