SiC Power Devices: Cosmic-Ray Robustness Engineer

STMicro; Arrondissement de Tours; Sur place; EUR 42 000 - 65 000; Plein temps

Résumé du poste

STMicroelectronics seeks a research-focused engineer to advance silicon carbide device modeling and cosmic-ray robustness for power electronics. The role involves defining models for cosmic-ray simulations and validating diode structures in collaboration with CNES.

You will work on simulating new diode structures, studying reverse characteristics of damaged diodes, and exploring high-voltage device applications for space, automotive, and smart-grid systems.

Qualifications

• Master's degree in semiconductor physics, condensed-matter physics, or particle-matter interaction.
• English level B2 and experience with finite-element simulations is a plus.

Responsabilités

• Defining models to be implemented in cosmic-ray simulations for silicon carbide devices.
• Performing simulations on existing diode structures to validate the simulation setup, in collaboration with CNES.
• Studying the reverse characteristics of damaged diodes and request analyses (electrical or structural) to understand the mechanisms involved.
• Simulating new diode structures to improve cosmic-ray robustness.

Connaissances

English proficiency

Finite-element simulations

Formation

Master's degree in semiconductor physics, condensed-matter physics, or particle-matter interaction

Description du poste

STMicroelectronics seeks a research-focused engineer to advance silicon carbide device modeling and cosmic-ray robustness for power electronics. The role involves defining models for cosmic-ray simulations and validating diode structures in collaboration with CNES.

You will work on simulating new diode structures, studying reverse characteristics of damaged diodes, and exploring high-voltage device applications for space, automotive, and smart-grid systems.