Cosmic-Ray Robustness Engineer (SiC) – Power Electronics

STMicroelectronics; Arrondissement de Tours; Sur place; EUR 55 000 - 75 000; Plein temps

Résumé du poste

STMicroelectronics seeks a researcher in silicon carbide device physics to model and simulate cosmic-ray effects and degradation mechanisms. You will validate diode structures with simulations, study reverse characteristics of damaged diodes, and explore new diode designs to improve robustness for aerospace and automotive applications.

Applicants should hold a Master degree in semiconductor physics and have strong English skills; experience with finite-elements simulations is a plus.

Qualifications

• Master degree in semiconductor physics, condensed-matter physics, or particle-matter interaction.
• B2 English level and finite-elements simulation experience would be appreciated.

Responsabilités

• Define and study models related to cosmic-ray interactions in silicon carbide devices.
• Perform simulations on existing diode structures to validate the experimental setup.
• Study reverse characteristics of damaged diodes and request analyses to understand mechanisms.
• Simulate new diode structures to improve cosmic-ray robustness.

Connaissances

Finite-elements simulation

B2 English

Formation

Master degree in semiconductor physics

Description du poste

STMicroelectronics seeks a researcher in silicon carbide device physics to model and simulate cosmic-ray effects and degradation mechanisms. You will validate diode structures with simulations, study reverse characteristics of damaged diodes, and explore new diode designs to improve robustness for aerospace and automotive applications.

Applicants should hold a Master degree in semiconductor physics and have strong English skills; experience with finite-elements simulations is a plus.