PhD: Low-Temp Transport & TEM of Al–Si Interfaces

COFUND QuanG; France; Sur place; EUR 20 000 - 28 000; Plein temps

Résumé du poste

COFUND QuanG in France offers a PhD position within the QuanG2 PhD Call for Applications. The project focuses on fabricating silicon membranes on SOI and studying Al-Si interfaces with TEM and low-temperature transport, aiming to observe charge-related phenomena and interface evolution under in-situ TEM biasing.

The PhD candidate will fabricate silicon membranes, contribute to device conception, carry out low-temperature transport and TEM experiments, and analyze data under supervision, with

Qualifications

• Interest in solid state, experimental and low temperature physics.
• Affinity with programming (in python), mathematics and simulations is a plus.
• Interest in quantum dot structures and advanced characterization techniques like transmission electron microscopy.

Responsabilités

• Fabrication and characterization work as part of the PhD project.
• Contribute to device conception and device fabrication at TU Vienna.
• Perform low temperature transport measurements and TEM experiments with supervisor support.
• Data analysis and interpretation of results.
• Publish findings and present at group meetings.

Connaissances

Solid state physics

Programming (Python)

Quantum dot structures

Formation

Master’s degree or equivalent

Description du poste

COFUND QuanG in France offers a PhD position within the QuanG2 PhD Call for Applications. The project focuses on fabricating silicon membranes on SOI and studying Al-Si interfaces with TEM and low-temperature transport, aiming to observe charge-related phenomena and interface evolution under in-situ TEM biasing.

The PhD candidate will fabricate silicon membranes, contribute to device conception, carry out low-temperature transport and TEM experiments, and analyze data under supervision, with