Study and Simulation of EMC Phenomena in High-Frequency SiC/GaN Power Modules

IFP Energies Nouvelles Group; Rueil-Malmaison; Vor Ort; EUR 10.000 - 13.000; Vollzeit

Zusammenfassung

IFP Energies Nouvelles Group invites engineering or master’s students (M2) to join an internship focused on the study and simulation of EMC phenomena in high-frequency SiC/GaN power modules. You will develop models and tools to assess conducted and radiated emissions and verify them through simulations.

The project aims to provide design insights for EMC-compliant high-performance power converters and may lead to a PhD continuation focusing on experimentation and modeling of EMC in WBG

Qualifikationen

• Engineering or master's students with strong knowledge in electrical engineering and power electronics.
• Familiarity with EMC and signal processing is a plus.
• Knowledge of SiC/GaN concepts is beneficial.

Aufgaben

• Develop models of EMC phenomena in WBG-based power semiconductor devices.
• Verify and validate the models through simulation.
• Review literature on EMC issues in WBG devices and related systems.
• Prepare a detailed internship report.

Kenntnisse

Electrical engineering

Power electronics

EMC concepts

Ausbildung

Master's degree in Electrical Engineering (M2)

Tools

MATLAB/Simulink

LTspice

Jobbeschreibung

Study and Simulation of EMC Phenomena in High-Frequency SiC/GaN Power Modules

With the development of power semiconductor devices based on wide-bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN), the field of power electronics is undergoing a technological revolution. Their integration enables the design of more compact converters operating under higher temperature, switching frequency, and power constraints.

However, these devices introduce new electromagnetic compatibility (EMC) challenges due to their high switching frequencies and high dv/dt values, which are significantly greater than those observed with conventional silicon (Si) devices. Addressing these constraints at the converter design stage, through the simulation-based estimation of conducted and radiated electromagnetic emissions, can lead to significant time and cost savings by reducing the number of testing phases.

The objective of this internship is to gain a better understanding of the electromagnetic behavior of SiC/GaN devices and to develop modeling and simulation tools that contribute to the design of higher-performance power converters compliant with EMC requirements.

Internship Objectives:

• Review a literature review of EMC issues in WBG devices and SiC/GaN-based power electronics systems.
• Develop models of EMC phenomena in WBG-based power semiconductor devices.
• Verify and validate the models through simulation.
• Prepare a detailed internship report

Candidate profile:

Engineering or master's students (M2) with strong knowledge in electrical engineering and power electronics.

• Proficiency in simulation tools (e.g., Matlab/Simulink, LTspice).
• Knowledge of EMC and signal processing is a plus.
• Knowledge of wide bandgap semiconductors (GaN, SiC).
• Proactive, dynamic, and collaborative.

Opportunities:

Potential continuation into a PhD project focused on experimentation and modeling of EMC in WBG power converters.

Keywords: Power Electronics, Electromagnetic Compatibility (EMC), WBG, SiC, GaN