High-Power Oxide Materials Internship—Semiconductors

Université Paris Saclay, Universite de Versailles, CNRS; Versailles; On-site; EUR 7,800 - 11,000; Part time

Benefits offered by this job

Transportation reimbursement

Job summary

GEMAC CNRS Versailles invites applications for an internship focused on oxide materials for high power electronic devices. The student will study how thin-film growth conditions affect structural, electrical, and optical properties within a collaborative project involving national and international partners.

Required background in solid state/semiconductor physics, plus fluency in English and French; strong instrumentation and data analysis skills are expected.

Qualifications

• Very strong background in solid state physics/semiconductors science.
• Fluent in English and French.
• Motivation to learn power electronics device principles.
• Ability to analyze and process data.
• Willingness to work independently and in a team.

Responsibilities

• Preparation of electrical contacts.
• Electrical transport measurements (I-V, C-V, Hall effect).
• Optical measurements of transmittance and reflectance.
• Structural characterization by XRD (X-ray diffraction).
• Analysis and interpretation of experimental results; writing scientific reports.
• Presenting results at scientific meetings; regular interactions with partners.

Skills

Solid state physics

Semiconductors

Data analysis

English

French

Education

Engineering school background

Job description

GEMAC CNRS Versailles invites applications for an internship focused on oxide materials for high power electronic devices. The student will study how thin-film growth conditions affect structural, electrical, and optical properties within a collaborative project involving national and international partners.

Required background in solid state/semiconductor physics, plus fluency in English and French; strong instrumentation and data analysis skills are expected.