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A leading organization in France is seeking a First Stage Researcher in Engineering Physics to investigate innovative functionalities in silicon photonic platforms. This role focuses on integrating advanced materials into photonic devices, addressing the growing demands in optical communications and aiming for breakthroughs in device performance.
Organisation/Company: CNRS
Department: Centre de Nanosciences et de Nanotechnologies
Research Field: Engineering Physics
Researcher Profile: First Stage Researcher (R1)
Country: France
Application Deadline: 11 Jul 2025 - 23:59 (UTC)
Type of Contract: Temporary
Job Status: Full-time
Hours Per Week: 35
Offer Starting Date: 1 Oct 2025
Is the job funded through the EU Research Framework Programme? Horizon Europe - MSCA
Is the Job related to staff position within a Research Infrastructure? No
To address the needs of cutting-edge applications in optical communications, it is increasingly necessary to develop innovative linear and nonlinear functionalities in silicon photonics platforms. The emerging photonic revolution calls for a new generation of photonic chips that offer more functionalities while being smaller, cheaper, and less power-consuming. Silicon photonics is regarded as the integration and scalability paradigm. However, current silicon photonic components do not fully meet these needs. Therefore, research into alternative physical phenomena and materials is essential, as some effects like the Pockels effect do not exist in silicon but are crucial for high-speed, low-power optical modulators.
The project will focus on integrating perovskite oxide thin films, specifically KTaNbO3, which has record high electro-optic coefficients in bulk form, into silicon photonics. The challenge is to produce thin films with these properties and incorporate them into low-loss photonic devices, demonstrating state-of-the-art optical modulators. The student will develop hybrid silicon photonic structures using thin layers provided by our partners and aim to demonstrate efficient optical and optoelectronic devices.