RF IC Design Engineer - GaN

IC Resources; Zaragoza; A distancia; EUR 40.000 - 70.000; Jornada completa

Descripción de la vacante

Join a cutting-edge team as an RF IC Design Engineer specializing in GaN technology. This remote-flexible opportunity in Zaragoza allows you to work on next-generation RF solutions, focusing on designing and optimizing RF ICs, collaborating closely with process engineers, and conducting essential validations. The ideal candidate will have proven RF IC design experience and proficiency with relevant design tools.

Formación

• Experience in RF IC design focused on GaN technology.
• Hands-on expertise in power amplifier and LNA design.
• Proficiency in RF design tools like Cadence, ADS, and HFSS.

Responsabilidades

• Design and develop RF ICs focused on GaN-based power amplifiers and LNAs.
• Conduct EM simulations and RF measurements to validate designs.
• Collaborate with process engineers and layout teams for manufacturability.

Conocimientos

RF IC design

GaN technology

Problem-solving skills

Communication skills

Herramientas

Cadence

ADS

HFSS

Descripción del empleo

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.

Responsibilities will include but are not limited to : Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs. Perform circuit-level design, simulation, and layout for RF ICs. Optimize amplifier performance for efficiency, linearity, and power output. Conduct EM simulations and RF measurements to validate designs. Work closely with process engineers and layout teams to ensure design manufacturability. Collaborate with system architects to define specifications and system integration. Support product validation, characterization, and troubleshooting.

I am looking for an individual with experience in some of the following areas : Experience in RF IC design, with a strong focus on GaN technology. Hands-on expertise in power amplifier and LNA design. Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects. Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools. Experience with wafer-level characterization and measurement techniques. Knowledge of RF packaging, parasitic extraction, and layout considerations. Strong problem-solving skills and the ability to work independently. Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions.

No visa sponsorship is available.

Please get in touch with Parm Shergill for more information.