RF IC Design Engineer - GaN

IC Resources; Salamanca; A distancia; EUR 40.000 - 70.000; Jornada completa

Descripción de la vacante

An exciting opportunity for an RF IC Design Engineer to join a leading company in Spain, focusing on GaN technologies for next-generation RF solutions. The role allows for remote flexibility and involves design, simulation, and validation of RF ICs. Candidates should have hands-on experience with power amplifiers and LNAs and be proficient in relevant RF design tools.

Formación

• Experience in RF IC design with GaN technology.
• Hands-on expertise in power amplifiers and LNAs.
• Excellent communication skills in English.

Responsabilidades

• Design and develop RF ICs focusing on GaN-based power amplifiers.
• Conduct EM simulations and RF measurements to validate designs.
• Collaborate with process engineers and system architects.

Conocimientos

RF IC design

GaN technology

Power amplifier design

LNA design

Circuit design principles

Problem-solving

Communication skills

Herramientas

Cadence

ADS

HFSS

Descripción del empleo

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.

Responsibilities will include but are not limited to : Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs. Perform circuit-level design, simulation, and layout for RF ICs. Optimize amplifier performance for efficiency, linearity, and power output. Conduct EM simulations and RF measurements to validate designs. Work closely with process engineers and layout teams to ensure design manufacturability. Collaborate with system architects to define specifications and system integration. Support product validation, characterization, and troubleshooting.

I am looking for an individual with experience in some of the following areas : Experience in RF IC design, with a strong focus on GaN technology. Hands-on expertise in power amplifier and LNA design. Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects. Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools. Experience with wafer-level characterization and measurement techniques. Knowledge of RF packaging, parasitic extraction, and layout considerations. Strong problem-solving skills and the ability to work independently. Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions.

No visa sponsorship is available.

Please get in touch with Parm Shergill for more information.