Rf Ic Design Engineer - Gan

buscojobs España; Palencia; A distancia; EUR 40.000 - 70.000; Jornada completa

Descripción de la vacante

A leading recruitment platform is looking for an RF IC Design Engineer specializing in Gallium Nitride technology. This role involves designing RF ICs, optimizing amplifier performance, and conducting simulations. The position offers flexible remote work options for qualified engineers located in Spain.

Formación

• Experience in RF IC design with focus on GaN technology.
• Proficiency in RF design tools like Cadence, ADS, or HFSS.
• Strong understanding of RF circuit design principles.

Responsabilidades

• Design and develop RF ICs focused on GaN power amplifiers and LNAs.
• Conduct EM simulations and validate designs.
• Collaborate with teams to ensure design manufacturability.

Conocimientos

RF IC design

GaN technology

Communication skills

Problem-solving

Herramientas

Cadence

ADS

HFSS

Descripción del empleo

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.

Responsibilities will include but are not limited to :

Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs.

Perform circuit-level design, simulation, and layout for RF ICs.

Optimize amplifier performance for efficiency, linearity, and power output.

Conduct EM simulations and RF measurements to validate designs.

Work closely with process engineers and layout teams to ensure design manufacturability.

Collaborate with system architects to define specifications and system integration.

Support product validation, characterization, and troubleshooting.

I am looking for an individual with experience in some of the following areas :

Experience in RF IC design, with a strong focus on GaN technology.

Hands-on expertise in power amplifier and LNA design.

Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects.

Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools.

Experience with wafer-level characterization and measurement techniques.

Knowledge of RF packaging, parasitic extraction, and layout considerations.

Strong problem-solving skills and the ability to work independently.

Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions.

No visa sponsorship is available.

Please get in touch with Parm Shergill for more information.