RF IC Design Engineer - GaN

IC Resources; Las Palmas de Gran Canaria; A distancia; EUR 45.000 - 75.000; Jornada completa

Descripción de la vacante

A leading company is seeking an RF IC Design Engineer with expertise in Gallium Nitride technology to join their innovative team. This role offers remote flexibility for engineers based in Spain and involves designing next-generation RF solutions and collaborating closely with various engineering teams. Ideal candidates should possess strong RF design skills along with hands-on experience in power amplifiers and LNAs.

Formación

• Experience in RF IC design focusing on GaN technology.
• Hands-on expertise in power amplifier and LNA design.
• Proficiency in relevant RF design tools like Cadence and ADS.

Responsabilidades

• Design and develop RF ICs focusing on GaN-based amplifiers.
• Conduct simulations and validations for designs.
• Collaborate with teams to ensure manufacturability.

Conocimientos

RF IC design

GaN technology

Impedance matching

Stability analysis

Non-linear effects

Problem-solving

Communication in English

Herramientas

Cadence

ADS

HFSS

Descripción del empleo

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.

Responsibilities will include but are not limited to :

• Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs.
• Perform circuit-level design, simulation, and layout for RF ICs.
• Optimize amplifier performance for efficiency, linearity, and power output.
• Conduct EM simulations and RF measurements to validate designs.
• Work closely with process engineers and layout teams to ensure design manufacturability.
• Collaborate with system architects to define specifications and system integration.
• Support product validation, characterization, and troubleshooting.

I am looking for an individual with experience in some of the following areas :

• Experience in RF IC design, with a strong focus on GaN technology.
• Hands-on expertise in power amplifier and LNA design.
• Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects.
• Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools.
• Experience with wafer-level characterization and measurement techniques.
• Knowledge of RF packaging, parasitic extraction, and layout considerations.
• Strong problem-solving skills and the ability to work independently.
• Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions.

No visa sponsorship is available.

Please get in touch with Parm Shergill for more information.