RF High-Power GaN Process Integration Engineer - Remote Day

Ardora III-V; Vigo; Presencial; EUR 90.000 - 120.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

Remote day

Flexible work hours

Paid time off up to 30 days

Relocation assistance

New branded office

Descripción de la vacante

SPARC Foundry is seeking a Senior Process Integration Engineer to advance RF‑GaN device technologies for high‑power applications in Vigo, Spain. You will bridge R&D and manufacturing, driving technology development and qualification across fabs.

The role requires 8+ years in GaN device & process integration, with strong knowledge of MOCVD, ALD, DOE methods, and RF/DC characterization. Fluency in English is essential; relocation to Vigo may be considered.

Formación

• MSc or PhD in Electrical Engineering or related field.
• 8+ years in industry-relevant R&D for GaN device & process development, with 5+ years in RF-GaN.
• Solid knowledge of fab processes: MOCVD epi, lithography, etching, cleaning, deposition including ALD.
• Experience with HEMT device physics, TCAD, and DOE methods & statistics; RF parametric characterization.
• Fluent English (written & spoken).

Responsabilidades

• Develop and qualify GaN RF‑GaN device technologies (HEMTs/MISHEMTs) for high‑power applications (>500W).
• Lead technology transfer from R&D to high‑volume manufacturing and ensure fab integration.
• Collaborate with fab process engineers to sustain and improve key deposition and etch processes (CVD, PVD, ALD).
• Drive complex R&D projects and support technology development milestones from concept to manufacturing.
• Plan and execute DOE studies and data‑driven analysis to meet performance and wafer targets.

Conocimientos

GaN device development

RF‑HEMTs

DOE methods

Fabrication processes

TCAD

Educación

MSc or PhD in Electrical Engineering

Herramientas

MOCVD epi

ALD

DC/RF characterization

TCAD tools

Descripción del empleo

SPARC Foundry is seeking a Senior Process Integration Engineer to advance RF‑GaN device technologies for high‑power applications in Vigo, Spain. You will bridge R&D and manufacturing, driving technology development and qualification across fabs.

The role requires 8+ years in GaN device & process integration, with strong knowledge of MOCVD, ALD, DOE methods, and RF/DC characterization. Fluency in English is essential; relocation to Vigo may be considered.