Senior Process Integration Engineer - GaN

Ardora III-V; Vigo; Presencial; EUR 90.000 - 120.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

Remote day

Flexible work hours

Paid time off up to 30 days

Relocation assistance

New branded office

Descripción de la vacante

SPARC Foundry is seeking a Senior Process Integration Engineer to advance RF‑GaN device technologies for high‑power applications in Vigo, Spain. You will bridge R&D and manufacturing, driving technology development and qualification across fabs.

The role requires 8+ years in GaN device & process integration, with strong knowledge of MOCVD, ALD, DOE methods, and RF/DC characterization. Fluency in English is essential; relocation to Vigo may be considered.

Formación

• MSc or PhD in Electrical Engineering or related field.
• 8+ years in industry-relevant R&D for GaN device & process development, with 5+ years in RF-GaN.
• Solid knowledge of fab processes: MOCVD epi, lithography, etching, cleaning, deposition including ALD.
• Experience with HEMT device physics, TCAD, and DOE methods & statistics; RF parametric characterization.
• Fluent English (written & spoken).

Responsabilidades

• Develop and qualify GaN RF‑GaN device technologies (HEMTs/MISHEMTs) for high‑power applications (>500W).
• Lead technology transfer from R&D to high‑volume manufacturing and ensure fab integration.
• Collaborate with fab process engineers to sustain and improve key deposition and etch processes (CVD, PVD, ALD).
• Drive complex R&D projects and support technology development milestones from concept to manufacturing.
• Plan and execute DOE studies and data‑driven analysis to meet performance and wafer targets.

Conocimientos

GaN device development

RF‑HEMTs

DOE methods

Fabrication processes

TCAD

Educación

MSc or PhD in Electrical Engineering

Herramientas

MOCVD epi

ALD

DC/RF characterization

TCAD tools

Descripción del empleo

Let us tell you a little bit about Sparc

Sparc FOUNDRY develops and produces photonic semiconductors as part of a strong European photonics ecosystem. The foundry will produce PICs (Photonic Integrated Circuits) and discrete components based on Group III-V semiconductors It will have the capacity to develop 20,000 wafers per year with different types of technologies based on Group III-V materials, including GaAs (Gallium Arsenide), InP (Indium Phosphide), and GaN (Gallium Nitride). These components will be used by industries around the world in sectors such as automotive, telecommunications, quantum computing, consumer electronics, defense, aerospace and medicine.

What will you do with us?

The Senior Integration Engineer for RF-GaN Device will be part of the R&D team and play a pivotal role in our GaN foundry team. SPARC Foundry’s RF-GaN Product Line is looking for engineers with industry-relevant experience in developing high-performing Gallium Nitride (GaN) device technologies for high-frequency applications, and to drive innovative fab-based technology development for leading-edge, high-power solutions (>500W) in Vigo, Spain.

As a Senior Process Integration Engineer, you will become a core member of a broader center of excellence in Wide Bandgap (WBG) technology development, driving innovation across technology platforms and bridging the gap between semiconductor processing and circuit performance. Engineers with a MSc or Ph.D. degree and over 8 years of industry-relevant R&D experience in Gallium Nitride technology are strongly preferred.

Essential Responsibilities

This position offers the unique opportunity to develop innovative RF Discrete & MMIC GaN technologies as a Senior Process Integration Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation.

Primary Responsibilities

• Develop & Qualify innovative process sequences and device structures (such as GaN HEMTs or GaN MISHEMTs) that meet our customer's performance, high-power thermal management, reliability, yield, and cost objectives eg. for applications exceeding 500W.
• Technical Lead of Technology Transfer Programs: Drive the successful transfer of new GaN technology nodes from R&D phases into high-volume manufacturing, ensuring seamless fab integration.
• Optimize Key Fabrication Processes: Collaborate with Fab process-engineers to develop, sustain, and improve critical cleanroom processes, including dry/wet etching, thin-film deposition (CVD, PVD), and Atomic Layer Deposition (ALD).
• Contribute to complex, technical projects critical to technology development and fab process qualification goals.
• Execute DOE (Design of Experiments) definition, planning, execution, and data-driven analysis of results to achieve device performance and wafer manufacturing targets.

Expanded Responsibilities

Collaborate actively within cross-functional teams to support innovation, interfacing seamlessly with various engineering groups—including RF design, small & large signal characterization, model verification, failure analysis, unit process module, reliability, manufacturing, and research organizations to contribute to overall program success.

What skill set are we looking for?

• Education: M.Sc or Ph.D. in Electrical Engineering, Chemical Engineering, Materials Science, Solid-State Physics, or another relevant engineering or physical science discipline.
• Years of Experience: 8+ years in an industry-relevant role in semiconductor device & process integration with at least 5+ years of Gallium Nitride (GaN) device & process development & integration experience, preferably RF-GaN HEMTs.
• Solid knowledge and expertise of:
  • (1) Fab fabrication processes such as MOCVD epi, lithography, dry/wet etching, cleaning, deposition (including ALD).
  • (2) HEMT device physics, TCAD, DOE methods & statistics, and DC & RF parametric characterisation techniques.
• Track Record: Demonstrated technical team collaboration and project ownership, advancing the state of the art and innovation through patents, novel processing approaches, or successful technology transfers.
• Language: Fluency in the English language (written & verbal).

Finally, as all our team we would really like to work with people who share our same passion for technology, photonics, semiconductors, and integrated optics.

What we offer

• Competitive and transparent compensation package. Specifics will be discussed during our first conversation.will be discussed during our first conversation.
• Clear and adaptive paid time off You’ll get up to 30 paid days off each year (23 standard vacation days + 7 additional company-wide days)
• Morning working schedule From mid‑June to September, our working hours are 8:00–15:00, just like every Friday during the rest of the year.
• Remote Day You can choose which day per week you want to work from home.
• New branded office (coming soon!) We are building a new branded office full of services oriented to our enhance our employee experience.
• Real work–life balance Flexibility is built into the way we operate. We understand and value your life outside working hours, and taking care of your rest time and holidays is part of our culture.
• Inclusive and positive culture We foster a truly people oriented culture, respectful environment where everyone can be themselves and feel supported.
• Multicultural team We’re a diverse group representing 5+ nationalities, and English is our common language to ensure everyone stays connected and included.
• Team moments and activities We enjoy spending time together, whether it’s for team‑building sessions, casual gatherings, or company meetups throughout the year.
• Visa Sponsorship and Relocation Services We are happy to sponsor visas for you and your family. In addition, we work with specialized partners to provide a full relocation package if you are coming from abroad.
• Vigo, a vibrant city to work and live! We are proud to be based in a city with an exceptional quality of life, giving our team the chance to enjoy a unique and inspiring environment.