(Quedan 3 Días) Rf Ic Design Engineer - Gan

buscojobs España; Valladolid; A distancia; EUR 45.000 - 60.000; Jornada completa

Descripción de la vacante

A leading company is seeking an RF IC Design Engineer specializing in Gallium Nitride technology. This role involves designing next-generation RF solutions with remote flexibility for engineers based in Spain. The ideal candidate will have hands-on experience in RF IC design, particularly with GaN technology, and will work closely with cross-functional teams to ensure manufacturability and performance optimization.

Formación

• Experience in RF IC design with a focus on GaN technology.
• Hands-on expertise in power amplifier and LNA design.

Responsabilidades

• Design and develop RF ICs focusing on GaN-based power amplifiers.
• Conduct EM simulations and RF measurements to validate designs.

Conocimientos

RF IC design

GaN technology

Problem-solving

Communication

Herramientas

Cadence

ADS

HFSS

Descripción del empleo

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.

Responsibilities will include but are not limited to :

1. Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs.
2. Perform circuit-level design, simulation, and layout for RF ICs.
3. Optimize amplifier performance for efficiency, linearity, and power output.
4. Conduct EM simulations and RF measurements to validate designs.
5. Work closely with process engineers and layout teams to ensure design manufacturability.
6. Collaborate with system architects to define specifications and system integration.
7. Support product validation, characterization, and troubleshooting.

Requirements:

• Experience in RF IC design, with a strong focus on GaN technology.
• Hands-on expertise in power amplifier and LNA design.
• Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects.
• Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools.
• Experience with wafer-level characterization and measurement techniques.
• Knowledge of RF packaging, parasitic extraction, and layout considerations.
• Strong problem-solving skills and the ability to work independently.
• Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions. No visa sponsorship is available. Please get in touch with Parm Shergill for more information.