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The Leibniz-Institut für Kristallzüchtung in Berlin is seeking a PhD Student for research on processing ultrahigh-purity germanium for radiation detection applications. You will explore Czochralski growth and characterization of HPGe crystals, alongside unique measurement techniques.
Ideal candidates hold a Master’s degree in relevant fields, possess strong semiconductor physics knowledge, and are motivated for scientific research. The position offers E13 salary scale benefits, including 30 vacation days and supports diversity and inclusion.
The Leibniz-Institut für Kristallzüchtung (IKZ) is a leading research institution in the field of science & technology as well as service & transfer of crystalline materials. Our goal is to enable solutions for pressing societal challenges (e.g. communication, artificial intelligence, climate protection, health, etc.) through modern electronic & photonic technologies. The work covers the entire spectrum from basic and applied research to pre-industrial development and is carried out in cooperation with national and international partners from universities, academies and industry. The Institute is part of the Forschungsverbund Berlin (https://www.fv-berlin.de) and a member of the Leibniz Association (https://www.leibniz-gemeinschaft.de). More details on the institute webpage: https://www.ikz-berlin.de.
Topic: “Processing, crystal growth and characterization of ultra-high purity germanium (HPGe) for radiation detection applications”.
High-purity germanium (HPGe) single crystals play a key role in radiation detection, particularly in gamma-ray spectroscopy, neutrinoless double-beta (0νββ) decay experiments, and low-mass dark matter searches. HPGe detectors offer excellent energy resolution with large detector sizes for high radiation detection efficiency. As a partner in the grand international research collaboration LEGEND (Large enriched germanium experiment for 0νββ-decay), our research focuses on the synthesis of high-quality and ultra-HPGe single crystals. One of the major challenges is to reduce and control the unintentional impurities (P, B, Al, etc.) to achieve the required purity level, typically corresponding to a net charge carrier density < 10⁻¹⁰ cm⁻³ (i.e. impurities below ppt level). Predicting impurity redistribution during HPGe zone refining is highly complex, and reliable advanced modelling can accelerate process optimization. Another challenge is the detection and quantification of ultra‑low impurity concentrations. These problems are addressed by finding new approaches and innovative process optimization.
The position is limited to three years. Payment is according to TVöD Bund (E13 75%) (Collective agreement for the public sector). The contract includes the usual social benefits (30 vacation days in a 5‑day week, flexible working hours). The Institute actively promotes the development of young scientists and follows the guidelines of the Leibniz Association.
The Institute actively supports a healthy work‑life balance and is an equal opportunities employer. Female candidates are encouraged to apply and will be given preference if suitably qualified. Among equally qualified candidates, preference will be given to candidates with disabilities. The Institute promotes diversity. We welcome every qualified application, regardless of age, belief, disabilities, ethnic origin, gender, nationality, religion or sexual orientation.
You will enjoy working in a motivated team, and you will gain unique experience in the renowned crystal growth institute and work on potentially ground‑breaking technologies for the production of semiconductor materials and its related research.
Priv.-Doz. Dr. R. Radhakrishnan Sumathi
Tel.: +49(0)30 246 499 401
radhakrishnan.sumathi@ikz-berlin.de
Then apply with a letter of motivation, curriculum vitae, and all relevant certificates by 20th July. Please go to Job offers/jobs on the homepage, click on this advertisement, and then click on “Apply online”. We look forward to receiving your application!