Doctoral Thesis - Reliability of Devices Under High Frequency Applications (f/m/div)

Infineon Technologies AG; München; Vor Ort; EUR 40.000 - 60.000; Vollzeit

Zusammenfassung

Infineon Technologies AG is offering an industrial doctorate position in Munich, Germany, in collaboration with TU Vienna. You will pursue a doctoral degree at a university while gaining professional experience, mentored by Infineon engineers and professors.

The research focuses on device degradation mechanisms such as BTI and TDDB for RF applications relevant to 5G/6G, automotive radar, and industrial IoT.

Qualifikationen

• Master's degree in electrical engineering, microelectronics, semiconductor physics, physics, or similar.
• Interest in or experience with semiconductor devices, device reliability, CMOS technologies, and electrical characterization.
• Hands-on laboratory work and careful data analysis.
• Experience with programming or data analysis tools (e.g., Python, MATLAB) is an advantage.
• Willing to travel between Vienna and Munich during the thesis period.
• Fluent level English (written and spoken); German is a plus.

Aufgaben

• Literature review and research foundation on BTI, mobility degradation, and reliability modeling in high-k transistor technologies.
• Develop measurement setup for RF BTI and TDDB measurements.
• Plan, perform, and analyze electrical reliability measurements for BTI and TDDB.
• Characterize RF-BTI and RF-TDDB across frequency, duty cycle, voltage and temperature.

Ausbildung

Master's degree in electrical engineering, microelectronics, semiconductor physics, physics, or similar

Tools

Python

MATLAB

Jobbeschreibung

#WeAreIn to create tiny chips and big careers. Curiosity drives progress. Will you drive it with us? As a PhD at Infineon, you'll collaborate with passionate minds, shape innovations that power tomorrow's world, and build a career where your expertise truly makes a difference. Are you in?

Your role As an industrial doctorate at Infineon, you will pursue a doctoral degree at a University and gain professional experience simultaneously - an ideal start for your career. Advance your research with us and profit from our vast network of doctoral candidates and the expertise of a university. Mentorship is handled by both professors and dedicated Infineon employees. The research is carried out in cooperation with the TU Vienna and under the supervision of Prof. Dr. Tibor Grasser and Prof. Dr. Michael Waltl. We are offering a doctoral thesis dealing with device degradation mechanisms such as bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB ), focussing on radio frequency (RF) applications. This is a highly relevant and future-oriented research topic, as RF technologies are becoming increasingly important for 5G and future 6G communication, connected vehicles, automotive radar, satellite communication, industrial IoT, and smart sensing. As these applications move toward higher frequencies, higher data rates, tighter integration, and more demanding operating conditions, device reliability becomes a key enabler for long-term product performance.

Key responsibilities in your new role

• Literature Review and Research Foundation : Review relevant literature on BTI, mobility degradation, and reliability modeling in modern high-k transistor technologies
• Measurement Setup Development : Make our new setup ready for RF BTI and TDDB measurements
• Electrical Reliability Measurements : Plan, perform, and analyze electrical reliability measurements for BTI and TDDB
• RF-BTI and RF-TDDB Characterization : Characterize RF-BTI and RF-TDDB across frequency, duty cycle, voltage, and temperature at single-device level
• Benchmarking Across Technologies : Compare measurement results across device variants, channel lengths, and technology nodes
• Model-Based Interpretation and Collaboration : Discuss the results with supervisors at TU Vienna and Infineon and translate measurements into model-backed limits by linking transistor drift to HTOL and RF performance

The learnings out of the thesis will lead to:

• RF-ready reliability methodology : Establishing a robust measurement and analysis approach for high-frequency applications
• Smarter design trade-offs : Enabling product and design optimization by balancing reliability risk with operating voltage

Your profile

• Education : You have a master's degree in electrical engineering, microelectronics, semiconductor physics, physics, or similar
• Experience and Technical Interest : You have an interest in or experience with semiconductor devices, device reliability, CMOS technologies, and electrical characterization
• Way of Working : You enjoy hands-on laboratory work and careful data analysis
• Data Analysis and Programming Skills : Experience with programming or data analysis tools, for example Python, MATLAB, or similar, is an advantage
• Availability : You are willing to travel between Vienna and Munich during the thesis period
• Language skills : Fluent level in English, both written and spoken. German is a plus

#WeAreIn for driving decarbonization and digitalization.

As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener. Are you in? We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion.

We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity.

Our hiring decisions are based on skills and experience. Even if you don’t meet every requirement, we encourage you to apply.

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