Investigation of III-V Heterostructures for High-Performance Electro-Optic Modulators

Imec; Vlaams-Brabant; On-site; EUR 7,800 - 12,000; Full time

Benefits offered by this job

Allowance provided

Job summary

Imec offers a Master internship (6 months) focused on investigating III-V heterostructures for high-performance electro-optic modulators. The role involves exploring optical and electronic properties of III-V materials, with emphasis on quantum-confined and heterojunction-based modulation mechanisms.

Students will perform numerical simulations and data analysis to understand how material composition, strain, and electric-field effects influence optical absorption and modulation efficiency,

Qualifications

• Master internship in a technical field related to electro-optics.
• Background in Electrotechnics/Electrical Engineering or Physics.
• Experience with numerical simulations and data analysis is required or strongly desired.

Responsibilities

• Investigate the optical and electronic properties of III-V semiconductor heterostructures.
• Conduct numerical simulations and data analysis to study the influence of material composition, heterostructure design, and electric-field effects on modulation performance.
• Support design and optimization of high-performance electro-optic modulators for photonic integrated circuits.

Skills

Numerical simulations

Data analysis

Optoelectronics

Education

Electrotechnics/Electrical Engineering

Physics

Job description

/ Investigation of III-V Heterostructures for High-Performance Electro-Optic Modulators

Investigation of III-V Heterostructures for High-Performance Electro-Optic Modulators

Explore how III-V semiconductor materials and heterostructures can be engineered to enhance optical modulation performance in next-generation photonic integrated circuits.

Type of internship: Master internship

Duration: 6 months

Required educational background: Electrotechnics/Electrical Engineering, Physics

Imec allowance will be provided.

The reference code for this position is 2026-INT-262. Mention this reference code in your application.

Future photonic integrated circuits require optical modulators with high efficiency, low power consumption, and compact footprints. III-V semiconductor materials exhibit strong electro-optic effects and offer significant opportunities for realizing high-performance optical modulation devices. In this internship, the student will investigate the optical and electronic properties of III-V semiconductor heterostructures, with a particular focus on quantum-confined and heterojunction-based modulation mechanisms. Numerical simulations and data analysis will be carried out to study the influence of material composition, heterostructure design, strain engineering, and electric-field-induced effects on optical absorption and modulation efficiency. The results will contribute to the design and optimization of next-generation III-V photonic modulators for integrated optical communication systems.