Staff Engineer, GaN Power Technology Development

Infineon Technologies AG; Villach; Vor Ort; EUR 90.000 - 140.000; Vollzeit

Zusammenfassung

Infineon Technologies AG is seeking a Staff Engineer for GaN Technology Development to join a world-class team shaping next-generation GaN power platforms. You will own key process blocks, run DOE-based experiments, and define the POR to deliver robust manufacturing and measurable performance improvements.

The ideal candidate has a technical university degree (master or PhD) and 3+ years in technology development or related fields, with strong semiconductor physics knowledge and experience in

Qualifikationen

• Technical university degree (master or PhD) in Electrical Engineering, Microelectronics, Physics, Materials Science or similar.
• 3+ years of relevant industry experience in technology development, process integration, power semiconductors or wide-bandgap technologies.
• Solid understanding of semiconductor device physics (GaN and HEMT structures a strong plus).
• Experience in DOE and statistical analysis.
• A structured, analytical problem-solving approach and ownership mindset.
• Fluent English; German (or motivation to learn) is an advantage.

Aufgaben

• Advance today’s GaN technology nodes and develop next-generation GaN power platforms.
• Own key process blocks end-to-end – drive proof of concept, initial setup, optimization, stability, and measurable performance gains.
• Define, establish, and maintain the Process of Record (POR) to ensure robust, scalable manufacturing.
• Plan and run experiments using DOE methodologies, then execute, analyze and document the results.
• Perform statistical analysis and derive actionable conclusions.
• Support root-cause investigations for stability and reliability issues.

Kenntnisse

DOE and statistical analysis

Analytical problem solving

Ownership mindset

Fluent English

Ausbildung

Master's degree in Electrical Eng./Microelectronics/Physics

PhD in Electrical Eng./Microelectronics/Physics

Jobbeschreibung

Infineon Technologies AG is seeking a Staff Engineer for GaN Technology Development to join a world-class team shaping next-generation GaN power platforms. You will own key process blocks, run DOE-based experiments, and define the POR to deliver robust manufacturing and measurable performance improvements.

The ideal candidate has a technical university degree (master or PhD) and 3+ years in technology development or related fields, with strong semiconductor physics knowledge and experience in