Senior RF PA/EDA Engineer — GaN/GaAs for 5G/6G

Qorvo, Inc.; Florida; On-site; USD 120,000 - 160,000; Full time

Job summary

Qorvo is seeking an experienced RF design engineer in the United States (Richardson TX or Apopka FL) to lead hands-on GaN/GaAs PA development for 5G NR/6G. You will validate EDA methodologies and optimize integration into multi-chip modules, working with Cadence, ADS, HFSS, and other tools.

You will design flows, mentor teams, and translate hands-on experience into scalable design practices across RF, analog, and digital domains in a fast-paced, export-controlled environment.

Qualifications

• Bachelors Degree in Electrical Engineering with 5+ years of industry experience in hands-on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience.
• Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high-frequency applications.
• Strong understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity.
• Extensive hands-on experience with ADS, HFSS, and Cadence for RF circuit and EM design.
• Solid background in RF measurement and characterization, with the ability to correlate simulated models to measured silicon performance.
• Demonstrated ability to translate hands-on design experience into scalable methodology, flows, and best practices for a broader design organization.
• Excellent technical communication and presentation skills; ability to work independently in a fast-paced environment.

Responsibilities

• Directly support the design of high-efficiency, high-linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, applying hands-on expertise to validate and continuously improve EDA methodology.
• Lead or support the integration of PA dies into multi-chip modules (MCM), optimizing methodology and flows for size, cost, and thermal performance.
• Provide day-to-day applications support for PA, RFIC, analog, mixed-signal, and digital design teams using industry-standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalent).
• Develop, qualify, and deploy RF/PA design flows spanning circuit-level simulation (ADS) and 3D electromagnetic simulation (HFSS), ensuring consistency between models and measured silicon performance for GaN/GaAs technologies.
• Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritized against real PA design and correlation challenges.
• Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design.
• Build reference design flows, PDK enablement, reusable automation, and documented best practices spanning RF, analog, AMS, and digital methodologies.
• Deliver hands-on training, documentation, and mentoring to raise designer proficiency; document and present methodology and design results to internal and external stakeholders.

Skills

RF design

GaN/GaAs PAs

S-parameters

Impedance matching

Cadence/HFSS/ADS

RF measurement

Technical communication

Education

Bachelor's Degree in Electrical Engineering

Tools

ADS

HFSS

Cadence

Job description

Qorvo is seeking an experienced RF design engineer in the United States (Richardson TX or Apopka FL) to lead hands-on GaN/GaAs PA development for 5G NR/6G. You will validate EDA methodologies and optimize integration into multi-chip modules, working with Cadence, ADS, HFSS, and other tools.

You will design flows, mentor teams, and translate hands-on experience into scalable design practices across RF, analog, and digital domains in a fast-paced, export-controlled environment.