Senior III-V Photonics Device Design Engineer

Work Options Group; Temecula (CA); Vor Ort; USD 150.000 - 190.000; Vollzeit

Zusammenfassung

Skorpios Technologies, Inc. seeks a top-level III-V Device Design Engineer to develop next-generation Si Photonics chip and module products. Join a high-performance technical team delivering disruptive innovations.

Responsibilities include design, modeling and simulation of high-speed modulators (Laser, MZM, EAM), photodetectors, RF performance, and manufacturability. Strong expertise in III-V devices and RF design required; PhD/PhD candidates encouraged.

Qualifikationen

• 10+ years in photonics device design and characterization
• M.S. or Ph.D. in Physics, Electrical Engineering, Materials Science or related field
• Deep understanding of Lasers, MZM, photodiodes and EAM devices
• Industrial experience in photonics device design and characterization preferred, with proven track record

Aufgaben

• Design, Model and Simulate high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors
• Model and Simulate Resistance and Capacitance effects for RF performance
• Perform impedance matching over large frequency range
• Establish tolerance and process design rules to enable DRC for Designs and Layouts
• Direct PIC Layout of designed components
• DOE Design and Design Validation Testing
• Design Review Support and Presentation
• Design for Manufacturability (DFM)
• Establish schematics Designs for Layout
• Use software to design III-V components and optimize RF performance

Kenntnisse

III-V design

RF design

Laser/MZM photonics

DFM

Ausbildung

M.S. or Ph.D. in Physics, Electrical Engineering, or Materials Science

Tools

Ansys Lumerical

JMP

MiniTAB

Zemax

Speos

Jobbeschreibung

Skorpios Technologies, Inc. seeks a top-level III-V Device Design Engineer to develop next-generation Si Photonics chip and module products. Join a high-performance technical team delivering disruptive innovations.

Responsibilities include design, modeling and simulation of high-speed modulators (Laser, MZM, EAM), photodetectors, RF performance, and manufacturability. Strong expertise in III-V devices and RF design required; PhD/PhD candidates encouraged.