High Speed Design Engineer

IC Resources

California (MO)

On-site

USD 140,000 - 210,000

Full time

2 days ago
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Job summary

IC Resources seeks a Principal High Speed Photonics Design Engineer to lead development of next-gen optoelectronic devices for photonic integrated circuits. You will own device design from simulation through fabrication and integration into high-speed systems.

Ideal candidate has a PhD, 10+ years in III-V/SiGe devices, and hands-on experience with modulators and photodetectors, plus proficiency with HFSS, CST, ADS, TCAD, and Crosslight. Collaborative, technically deep with system-level mindset.

Qualifications

  • PhD in Electrical Engineering, Applied Physics, or related field.
  • 10+ years of industry experience in high speed optoelectronic devices.
  • Deep understanding of III-V and/or SiGe device physics.
  • Hands-on design experience with high speed modulators and photodetectors.
  • Experience taking designs through simulation, fabrication, testing and iteration.

Responsibilities

  • Lead design and optimization of high speed optoelectronic devices for 200 Gb/s and beyond.
  • Develop active optical components including EAMs, MZMs, PIN and UTC photodetectors.
  • Model electrical, optical, RF device behavior and parasitics.
  • Conduct high-speed device simulation using HFSS, CST, ADS, TCAD, or Crosslight.
  • Analyze measurements and drive design iterations; develop compact models for PIC teams.

Skills

High-speed photonics design
Device physics
Optoelectronic devices
Modulators
Photodetectors
RF characterization
Circuit modeling
TCAD tools

Education

PhD in Electrical Engineering

Tools

HFSS
CST
ADS
Sentaurus TCAD
Crosslight

Job description

Principal High Speed Photonics Design Engineer

We are seeking a Principal High Speed Photonics Design Engineer to lead the development of next generation high speed optoelectronic devices for advanced photonic integrated circuits.

This is a hands on senior technical role focused specifically on the design, modeling, optimization, and validation of high speed optical modulators and photodetectors. The ideal candidate brings deep semiconductor device physics expertise and a demonstrated history of developing active photonic devices for high speed optical communication products.

The engineer will own device development from simulation and design through fabricated device characterization, design iteration, modeling, and integration into high-speed optical systems.

What You'll Work On
  • Lead the design and optimization of high speed III-V and/or SiGe optoelectronic devices, with emphasis on operation at 200 Gb/s and beyond
  • Develop active optical components including electro-absorption modulators (EAMs), Mach-Zehnder modulators (MZMs/MZIs), PIN photodetectors, and/or UTC photodetectors
  • Model electrical, optical, and RF device behavior including bandwidth, impedance, parasitics, capacitance, traveling-wave effects, and equivalent circuit performance
  • Perform high-speed device simulation using tools such as HFSS, CST, ADS, Sentaurus TCAD, Crosslight, or comparable platforms
  • Analyze fabricated device measurements and correlate experimental results against simulations to drive subsequent design iterations
  • Develop compact and equivalent circuit models suitable for use by PIC designers and system engineers
  • Partner with photonic layout and semiconductor process teams to translate device designs into mask layouts and manufacturable structures
  • Collaborate with high speed systems, packaging, fabrication, reliability, and test engineering teams to validate device performance in integrated hardware
  • Support RF and electro-optical characterization of high speed modulators and photodetectors
  • Generate technical design documentation and contribute to patents and technical publications
What We're Looking For
  • PhD in Electrical Engineering, Applied Physics, Materials Science, Photonics, or a closely related discipline
  • 10+ years of industry experience developing high speed semiconductor optoelectronic devices
  • Deep understanding of III-V and/or SiGe semiconductor device physics
  • Demonstrated hands on design experience with high speed modulators and/or photodetectors
  • Strong experience with devices such as EAMs, MZMs, PIN photodiodes, UTC photodiodes, or closely related high speed active photonic components
  • Experience designing devices for optical transceivers, optical interconnects, or high-speed communication systems
  • Experience taking device designs through simulation, fabrication, characterization, and design iteration
  • Strong knowledge of RF behavior and high speed device characterization
  • Experience with high-frequency simulation and device design tools such as HFSS, CST, ADS, Sentaurus TCAD, Crosslight, or equivalent
  • Working knowledge of semiconductor fabrication processes and the interaction between device design and process technology
  • Ability to work closely with multidisciplinary engineering teams while remaining deeply hands on technically

Candidates with experience in one or more of the following areas will be especially relevant:

  • III-V electro-absorption modulators
  • UTC or high-speed PIN photodetectors
  • Traveling-wave electrodes and high-frequency device structures
  • S-parameter and RF characterization of photonic devices
  • Compact modeling or equivalent-circuit modeling of active photonic components
  • Development of active devices that have progressed into commercial transceiver or optical-interconnect products

This position is best suited to an engineer whose career has centered on active high speed photonic device design and device physics.

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