III-V Device Design Engineer for Silicon Photonics Integration

Work Options Group

Temecula (CA)

On-site

USD 150,000 - 190,000

Full time

14 days+

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Job summary

Skorpios Technologies, Inc. seeks a top-level III-V Device Design Engineer to develop next-generation Si Photonics chip and module products. Join a high-performance technical team delivering disruptive innovations.

Responsibilities include design, modeling and simulation of high-speed modulators (Laser, MZM, EAM), photodetectors, RF performance, and manufacturability. Strong expertise in III-V devices and RF design required; PhD/PhD candidates encouraged.

Qualifications

  • 10+ years in photonics device design and characterization
  • M.S. or Ph.D. in Physics, Electrical Engineering, Materials Science or related field
  • Deep understanding of Lasers, MZM, photodiodes and EAM devices
  • Industrial experience in photonics device design and characterization preferred, with proven track record

Responsibilities

  • Design, Model and Simulate high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors
  • Model and Simulate Resistance and Capacitance effects for RF performance
  • Perform impedance matching over large frequency range
  • Establish tolerance and process design rules to enable DRC for Designs and Layouts
  • Direct PIC Layout of designed components
  • DOE Design and Design Validation Testing
  • Design Review Support and Presentation
  • Design for Manufacturability (DFM)
  • Establish schematics Designs for Layout
  • Use software to design III-V components and optimize RF performance

Skills

III-V design
RF design
Laser/MZM photonics
DFM

Education

M.S. or Ph.D. in Physics, Electrical Engineering, or Materials Science

Tools

Ansys Lumerical
JMP
MiniTAB
Zemax
Speos

Job description

Description

Skorpios Technologies, Inc., an innovator in heterogeneous integration of silicon photonic technology and semiconductor development, is rapidly expanding. We are in search of a top-level III-V Device Design Engineer for developing next-generation Si Photonics chip and module products. This is an opportunity to work with a highly motivated, high performance technical team on highly differentiated, disruptive technology.

Description

Skorpios Technologies, Inc., an innovator in heterogeneous integration of silicon photonic technology and semiconductor development, is rapidly expanding. We are in search of a top-level III-V Device Design Engineer for developing next-generation Si Photonics chip and module products. This is an opportunity to work with a highly motivated, high performance technical team on highly differentiated, disruptive technology.

Responsibilities
  • Design, Model and Simulate high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors.
  • Model and Simulate Resistance and Capacitance effects from EAM and MZM Modulators, Photodiodes and Laser Diodes to provide improved RF performance of the components into integrated circuits
  • Perform impedance matching over large frequency range
  • Establish tolerance and process design rules to enable DRC for Designs and Layouts
  • Direct PIC Layout of designed components
  • DOE Design and Design Validation Testing
  • Design Review Support and Presentation
  • Design for Manufacturability (DFM).
  • Establish schematics Designs for Layout.
  • Using computer software to design III-V components and optimize for RF performance of optical to electrical conversion efficiency.
  • RF device testing and electrical/optical s-parameter measurement and characterization
Competencies
  • Ability to work in an integrated and diverse team environment.
  • Ability to work with a large body of data and the necessary statistical analysis tools, and the ability to present the data and ideas to a diverse audience.
  • Good communication skills.
  • Ability to present complex problems to internal peers as well as potential customers
  • III-V and RF design circuitry skills
  • Problem solving and trouble shooting skills
  • Proficiency with Microsoft Excel
  • Proficiency with Software Design Tools like Ansis Lumerical
  • Interpersonal, verbal and written communication skills
Requirements
  • 10+ years' experience
  • M.S. or Ph.D. in Physics, Electrical Engineering, Material Science or a related field. Photonics or a related discipline with emphasis in optical communications and high speed optical III-V components.
  • Deep understanding of Lasers, MZM, photodiodes and EAM devices is a must.
  • Extensive industrial experience in photonics (Si or III-V) device design and characterization is preferred, with a proven track record of success, from concept to manufacturing. Alternatively, PhD graduate who has done outstanding research work on directly related devices may be accepted for the position.
  • Solid understanding of Epitaxy constraints, band structures, quantum effects, carriers' diffusion, optical modes for optical communications.
  • Understand how to design various III-V devices, including high-power and high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors.
  • Proficient in design and simulations for III-V active photonic devices.
  • Familiar with optoelectrical device characterization and analysis.
  • Familiar with components reliability concepts.
  • Able to work with processing engineers to define fabrication methods.
  • Strong problem-solving skills with demonstrated track of record.
  • Able to work hard in a dynamic start-up environment.
  • Thrives in fast-paced environment.
  • Excellent verbal and writing communication skills.
Preferred Education And Experience
  • Desired are candidates with significant industrial experience in the III-V components industry.
  • Ansys Lumerical, Zemax and Speos, JMP or Mini-Tab Experience preferred.
Work Authorization/Security Clearance Requirements

Authorization may be required to release covered technology to employees who are not U.S. citizens, U.S. nationals, lawful permanent residents, asylees, or refugees

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