Principal Engineer, Technology Development

GLOBALFOUNDRIES U.S. 2 LLC

Essex Junction (VT)

On-site

USD 85,000 - 146,000

Full time

8 days ago
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Job summary

GlobalFoundries in Vermont (FAB9) seeks a Technology Development Process Integration and Device Engineer to develop RF GaN technologies, delivering performance and reliability demonstrations across qualification milestones from conception to installation.

You will collaborate with cross‑functional teams including testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD, to drive successful programs.

Qualifications

  • BS in Electrical Engineering or related field with 2–4 years of experience; MS 1–3 years; PhD 0–1 year.
  • GPA 3.0 or higher and good academic standing.
  • Knowledge of GaN HEMT and modern semiconductor device physics and characterization (DC, s-parameter, loadpull, pulsed I‑V).
  • Experience in semiconductor processing with wide band gap materials (III‑N) preferred.
  • English language fluency (written & verbal).

Responsibilities

  • Develop integrated process flows and devices structures for RF GaN technologies.
  • Deliver performance and reliability demonstrations across development milestones.
  • Collaborate with testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD teams.
  • Plan, execute and analyze experiments; summarize inline/test lab measurements.

Skills

GaN HEMT physics
Device characterization
Semiconductor processing
MS Office & statistics

Education

Bachelor's degree in Electrical Engineering
Master's degree in Electrical Engineering
PhD in Electrical Engineering

Tools

MS Office
Statistical Analysis software

Job description

About GlobalFoundries GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.

New College Graduates Overview

We offer many full‑time employment paths for recent graduates, which provide accelerated training in a fast‑paced work environment, cross‑functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life‑long connections and skills.

Summary of Role

We are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.

Essential Responsibilities Include

This position offers the unique opportunity to develop innovative RF GaN technologies as a Technology Development Process Integration and Device Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation. Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers. Collaborate with various engineering teams outside the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success. Support technology development qualification milestones from conception through manufacturing installation. Support planning, design, execution, and analysis of experiments, including constructional analysis, inline and test lab measurement summarization for performance, reliability, manufacturability capability, and defectivity assessments.

Other Responsibilities

Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications

Requires a technical (University) degree in the field of Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR). BS + 2‑4 years of experience or MS + 1‑3 year of experience. PhD + 0‑1 year of experience. Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s‑parameter, loadpull, pulsed I‑V). Experience in semiconductor processing with emphasis on wide band gap materials like the III‑N material system. Must have at least an overall 3.0 GPA and proven good academic standing.

Language Fluency - English (Written & Verbal)

Physical Capacity Demands – some amount of time required to work in a manufacturing clean room, with product handling.

Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments.

Preferred Qualifications

Master’s or PhD in Electrical Engineering, Materials Science, Solid State Physics or other relevant Electrical engineering, engineering or physical science discipline. Prior related internship or co‑op experience. Demonstrated prior leadership experience in the workplace, school projects, competitions, etc. Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity. Strong written and verbal communication skills. Strong planning & organization skills. Research experience in GaN e‑mode or d‑mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices. Fundamental understanding of WBG device physics like dispersion, traps, self‑heating, buffer design. Experience in semiconductor processing in GaN‑on‑Silicon technologies. Experience characterizing GaN‑on‑Si or Wide Bandgap devices. Excellent interpersonal skills, energetic,motivated,andself‑driven. Demonstrateability to work well within a global matrixed team or environmentwith minimal supervision.

#NCGProgramUS Expected Salary Range

Salary Range: $85,000.00 - $146,000.00. The exact Salary will be determined based on qualifications, experience and location. If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case‑by‑case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with GlobalFoundries is conditioned upon the successful completion of pre‑employment conditions, as applicable, and subject to applicable laws and regulations.

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third‑party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law.

We shape what's essential. At GlobalFoundries you will find a vibrant work environment where collaboration and innovation thrive. Our diverse and global team shares a culture of respect and inclusivity, representing the best in the industry. We celebrate success together and are united by our dedication to excellence and our desire to improve and empower the world.

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