Postdoctoral Fellow (PREP0004333)

Johns Hopkins University; Baltimore (MD); On-site; USD 70,000 - 90,000; Full time

Job summary

Johns Hopkins University is seeking a PREP Research Associate to support the NIST Materials Measurement Laboratory. In this role, you will advance strain measurement methods for semiconductor devices using advanced techniques.

The position requires a Ph.D. in a related field, hands-on experience with SEM and strong data analysis skills. You will collaborate with semiconductor companies and present your findings at conferences.

Qualifications

• Ph.D. in a relevant field required.
• Hands-on experience with scanning electron microscopes.
• Familiarity with data-analysis programming such as Python and MATLAB.

Responsibilities

• Operate SEM to collect EBSD data for analysis.
• Analyze HR-EBSD data with various software tools.
• Assess strain measurement precision using NIST materials.
• Generate simulated EBSD patterns for experimental comparison.
• Collaborate with stakeholders in semiconductor manufacturing.
• Publish findings and present at scientific conferences.

Skills

Scanning electron microscope operation

Data analysis with Python

Image processing

Collaboration skills

Strong communication skills

Education

Ph.D. in materials science, physics, chemistry, or chemical engineering

Job description

PREP Research Associate – CHIPS Funded Project

The National Institute of Standards and Technology (NIST) is inviting applications for a PREP Research Associate in the Materials Measurement Laboratory. This role will support a national effort to advance strain measurement methods for semiconductor devices using electron backscatter diffraction (EBSD) and transmission Kikuchi diffraction (TKD). U.S. citizens are preferred.

Key Responsibilities

• Operate a scanning electron microscope (SEM) to collect EBSD data for HR-EBSD analysis.
• Analyze HR-EBSD data with commercial, open-source, and custom-developed software.
• Assess precision and accuracy of strain measurements using NIST reference materials and customized samples.
• Generate simulated EBSD patterns with commercial/open-source codes for comparison with experimental data.
• Operate an automated focused ion beam (FIB) to create electron-transparent samples from semiconductor devices for TKD and 4D-STEM strain measurements.
• Collaborate internally at NIST and with external stakeholders such as semiconductor companies and detector manufacturers.
• Publish results in peer reviewed journals and present at scientific conferences.

Qualifications

• Ph.D. in materials science, physics, chemistry, chemical engineering or related field.
• Hands-on expertise operating scanning electron microscopes with EBSD detectors.
• Experience with developing custom data-analysis workflows, including image processing in programming environments such as Python, C++, Mathematica, MATLAB.
• Knowledge of the mechanics of materials including stress, strain, deformation and single-crystal elasticity.
• Basic understanding of finite element analysis (FEA) for mechanical simulation of complex geometries.
• Strong written and oral communication skills; ability to work independently and as part of a team.
• U.S. Citizen is preferred.

Equal Opportunity Employer

The National Institute of Standards and Technology is an equal opportunity employer. It does not discriminate on the basis of sex, gender, marital status, pregnancy, race, color, ethnicity, national origin, age, disability, religion, sexual orientation, gender identity or expression, veteran status, or other legally protected characteristics.